Solar‐Blind Position‐Sensitive Detectors Fabricated from β‐Ga<sub>2</sub>O<sub>3</sub>/Polycrystalline Diamond Heterojunctions

Li, Kaiyong; Zang, Jinhao; Shan, Chongxin; Tian, Yongzhi; Lin, Chao-Nan; Sun, Pengxiang; Zhang, Zhenfeng; Chen, Yancheng; Liu, Kaikai

doi:10.1002/pssr.202100347

Cited by 12 publications

(8 citation statements)

References 37 publications

(43 reference statements)

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“…[23] However, the response range of these PSDs is always in the visible to near-infrared region, limiting their potential applications in the important ultraviolet (UV) detection fields. [24,25] Furthermore, these PSDs can only operate at temperatures below 400 K due to the narrow bandgap of silicon which is prone to generate hot carriers. [26,27] In practical applications, most detectors need to operate in harsh environments of high…”

Section: Introductionmentioning

confidence: 99%

“…[ 26,27 ] In practical applications, most detectors need to operate in harsh environments of high temperatures, especially in the scenarios of UV light detection such as aerospace, missile tracking, fire alarm, corona detection, etc. [ 27–30 ] Therefore, UV PSDs operating at high temperature is urgently needed. Previous studies have demonstrated that the aromatic heterocyclic structure of g‐C 3 N 4 makes it highly stable even at 800 K. [ 31,32 ] Hence, the wafer‐scale, large bandgap, good homogeneity, and high‐temperature resistance g‐C 3 N 4 films are ideal candidates for UV detectors working at high temperatures.…”

Section: Introductionmentioning

confidence: 99%

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Hybrid 2D/3D Graphitic Carbon Nitride‐Based High‐Temperature Position‐Sensitive Detector

Chen

Yang

et al. 2023

Energy & Environ Materials

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Ultraviolet position‐sensitive detectors (PSDs) are expected to undergo harsh environments, such as high temperatures, for a wide variety of applications in military, civilian, and aerospace. However, no report on relevant PSDs operating at high temperatures can be found up to now. Herein, we design a new 2D/3D graphitic carbon nitride (g‐C3N4)/gallium nitride (GaN) hybrid heterojunction to construct the ultraviolet high‐temperature‐resistant PSD. The g‐C3N4/GaN PSD exhibits a high position sensitivity of 355 mV mm−1, a rise/fall response time of 1.7/2.3 ms, and a nonlinearity of 0.5% at room temperature. The ultralow formation energy of −0.917 eV atom−1 has been obtained via the thermodynamic phase stability calculations, which endows g‐C3N4 with robust stability against heat. By merits of the strong built‐in electric field of the 2D/3D hybrid heterojunction and robust thermo‐stability of g‐C3N4, the g‐C3N4/GaN PSD delivers an excellent position sensitivity and angle detection nonlinearity of 315 mV mm−1 and 1.4%, respectively, with high repeatability at a high temperature up to 700 K, outperforming most of the other counterparts and even commercial silicon‐based devices. This work unveils the high‐temperature PSD, and pioneers a new path to constructing g‐C3N4‐based harsh‐environment‐tolerant optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Hybrid 2D/3D Graphitic Carbon Nitride‐Based High‐Temperature Position‐Sensitive Detector

Chen

Yang

et al. 2023

Energy & Environ Materials

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“…The heterogeneous integration materials were commonly achieved by the hetero-epitaxial growth. Up to now, β-Ga 2 O 3 thin films have been hetero-epitaxially grown on SiC and diamond by various growth techniques, e.g., molecular beam epitaxy (MBE), pulsed laser deposition (PLD) and plasmaenhanced chemical vapor deposition (PECVD) [9][10][11][12][13]. However, the hetero-epitaxially grown β-Ga 2 O 3 thin films on SiC and diamond were unqualified for the high-performance power devices due to growth defects caused by lattice and thermal mismatch.…”

Section: Introductionmentioning

confidence: 99%

Wafer-scale single-crystalline β-Ga2O3 thin film on SiC substrate by ion-cutting technique with hydrophilic wafer bonding at elevated temperatures

Shen

Chen

et al. 2022

Sci. China Mater.

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Heterogeneous integration of β-Ga 2 O 3 on a highly thermal conductive SiC substrate is an efficient solution to solve its bottleneck of thermal dissipation for highpower electronics. In this work, a 2-inch high-quality (201) β-Ga 2 O 3 single-crystalline film was transferred to the 4H-SiC substrate via the ion-cutting technique with hydrophilic bonding at elevated temperatures. The evolution process of the surface blistering on the hydrogen-implanted β-Ga 2 O 3 together with the internal pressure in blisters were investigated systematically to understand the physical mechanisms of the ion-cutting of β-Ga 2 O 3 thin film. As suggested by the finite element simulation, the hydrophilic bonding was carried out at an elevated bonding temperature of 96°C to prevent the debonding of β-Ga 2 O 3 /4H-SiC during the ioncutting process via reducing the thermal stress. The astransferred β-Ga 2 O 3 thin film exhibited a narrow full width at half maximum of the X-ray diffraction of 79.2 arcsec, and an extremely smooth surface with a root-mean-square roughness of 0.1 nm was achieved after chemical mechanical polishing. It is expected that the β-Ga 2 O 3 /4H-SiC heterogeneous integration material obtained by the ion-cutting technique with hydrophilic bonding at elevated temperatures will serve as a practical platform for high-performance β-Ga 2 O 3 power devices.

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“…Different types of SBPDs based on diamond have been demonstrated, such as Schottky diodes, metal–semiconductor–metal (MSM) photodetectors, and heterojunction photodetectors . Despite their simple structures, they have limited applications due to a lack of flexibility in tuning their performance during operation .…”

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confidence: 99%

High-Performance Diamond Phototransistor with Gate Controllable Gain and Speed

et al. 2023

J. Phys. Chem. Lett.

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This paper presents a fabricated solar-blind phototransistor based on hydrogen-terminated diamond. The phototransistor shows a large photocurrent and enhancement of responsivity over conventional two-terminal diamond-based photodetector. These enhancement effects are owing to the internal gain of the phototransistor. The fabricated phototransistor exhibits a high photoresponsivity (R) of 2.16 × 10 4 A/W and a detectivity (D*) of 9.63 × 10 11 jones, with gate voltage (V G ) and drain voltage of approximately −1.5 V and −5 V, respectively, under 213 nm light illumination. Even at ultralow operating voltage of −0.01 V, the device records satisfactory performance with R and D* of 146.7 A/W and 6.19 × 10 10 jones, respectively. By adjusting the V G , photocurrent generation in the device can be continuously tuned from the fast photoconductive effect to the optical gating effect with high optical gain. When V G increases from 1.4 to 2.4 V, the decay time decreases from 1512.0 to 25.5 ms. Therefore, responsivity, dark current, I photo /I dark , and decay time of the device can be well tuned by V G .

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Solar‐Blind Position‐Sensitive Detectors Fabricated from β‐Ga₂O₃/Polycrystalline Diamond Heterojunctions

Cited by 12 publications

References 37 publications

Hybrid 2D/3D Graphitic Carbon Nitride‐Based High‐Temperature Position‐Sensitive Detector

Hybrid 2D/3D Graphitic Carbon Nitride‐Based High‐Temperature Position‐Sensitive Detector

Wafer-scale single-crystalline β-Ga2O3 thin film on SiC substrate by ion-cutting technique with hydrophilic wafer bonding at elevated temperatures

High-Performance Diamond Phototransistor with Gate Controllable Gain and Speed

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Solar‐Blind Position‐Sensitive Detectors Fabricated from β‐Ga2O3/Polycrystalline Diamond Heterojunctions

Cited by 12 publications

References 37 publications

Hybrid 2D/3D Graphitic Carbon Nitride‐Based High‐Temperature Position‐Sensitive Detector

Hybrid 2D/3D Graphitic Carbon Nitride‐Based High‐Temperature Position‐Sensitive Detector

Wafer-scale single-crystalline β-Ga2O3 thin film on SiC substrate by ion-cutting technique with hydrophilic wafer bonding at elevated temperatures

High-Performance Diamond Phototransistor with Gate Controllable Gain and Speed

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Resources

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Solar‐Blind Position‐Sensitive Detectors Fabricated from β‐Ga₂O₃/Polycrystalline Diamond Heterojunctions