Solar-cell radiance standard for absolute electroluminescence measurements and open-circuit voltage mapping of silicon solar modules

Mochizuki, Takayasu; Kim, Changsu; Yoshita, Masahiro; Mitchell, J.; Zhu, Lin; Chen, Shaoqiang; Takato, Hidetaka; Kanemitsu, Yoshihiko; Akiyama, Hidefumi

doi:10.1063/1.4940159

Cited by 25 publications

(10 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The optoelectronic reciprocity relation [1] has been proposed as a theorem which relates the electroluminescence (EL) and the photovoltaic external quantum efficiency (EQE) at short circuit in p-n junction diodes. With the use of the theorem, several new techniques for evaluating the electrical properties of solar cells based on the optical measurement become available, including the indirect measurement of the subcell voltage of multi-junction solar cells [2][3][4] and the spatial mapping of the local voltage and other electrical properties [5][6][7][8][9][10]. The derivation of this reciprocity between the EL (carrier injection followed by photon emission) and the EQE (photon absorption followed by carrier collection) is based on two relations: the reciprocity of photon emission/absorption and the reciprocity of carrier injection/collection.…”

Section: Introductionmentioning

confidence: 99%

Generalized Reciprocity Relations in Solar Cells with Voltage-Dependent Carrier Collection: Application to p - i - n Junction Devices

et al. 2019

View full text Add to dashboard Cite

Two reciprocity theorems are important for both fundamental understanding of the solar cell operation and applications to device evaluation: 1) the carrier-transport reciprocity connecting the dark-carrier injection with the short-circuit photocarrier collection and 2) the optoelectronic reciprocity connecting the electroluminescence with the photovoltaic quantum efficiency at short circuit. These theorems, however, fail in devices with thick depletion regions such as p-i-n junction solar cells. By properly linearizing the carrier transport equation in such devices, we report that the dark-carrier injection is related to the photocarrier collection efficiency at the operating voltage, not at short circuit as suggested in the original theorem. This leads to the general form of the optoelectronic reciprocity relation connecting the electroluminescence with the voltage-dependent quantum efficiency, providing correct interpretation of the optoelectronic properties of p-i-n junction devices. We also discuss the validity of the well-known relation between the open-circuit voltage and the external luminescence efficiency. The impact of illumination intensity and device parameters on the validity of the reciprocity theorems is quantitatively investigated.ABSTRACT invalidity of the theorem in p-i-n junction solar cells has been addressed in the original paper [1], and subsequently confirmed by the numerical simulation [23,24]. When evaluating p-i-n junction solar cells using the optical measurement [25], a careful interpretation of the

show abstract

Section: Introductionmentioning

confidence: 99%

Generalized Reciprocity Relations in Solar Cells with Voltage-Dependent Carrier Collection: Application to p - i - n Junction Devices

et al. 2019

View full text Add to dashboard Cite

show abstract

“…Based on the absolute measurements of the EL external quantum efficiency, the I‐V relations of subcells can be obtained in multijunction solar cells . In addition, many other inspiring research studies have suggested that EL imaging or mapping is a promising tool for characterizing defect distribution, series resistance distribution, open‐circuit voltage, and minority carrier diffusion length of solar cells. Moreover, compared with the relative EL measurement which could not provide directly absolute information—such as the EL intensity distribution and internal voltage distribution—the absolute EL imaging technique with calibration is an excellent technique for the electrical analyses of solar cells.…”

Section: Introductionmentioning

confidence: 99%

Absolute electroluminescence imaging with distributed circuit modeling: Excellent for solar‐cell defect diagnosis

Hong

Wang

Chen

et al. 2019

Progress in Photovoltaics

Self Cite

View full text Add to dashboard Cite

Spatially resolved absolute electroluminescence (EL) imaging demonstrates the localized EL intensity and the uniformity of solar cells. Combined with two‐dimensional (2‐D) distributed circuit network modeling, detailed and important information that is contained in experimental data can be extracted for in‐depth understanding of solar cell performances. Herein, we measured the absolute EL images of three different solar cells (Si, GaAs, and Cu (In,Ga)Se2 (CIGS)) and observed the different injection‐current‐dependent EL intensities of the defect points (dark or bright) on the solar cells. The origins of these defects were attributed to different defect types according to our established 2‐D distributed equivalent circuit model. The results demonstrated that the combination of absolute EL imaging and distributed circuit modeling yielded accurate quantitative diagnoses of the electrical defects in solar cells.

show abstract

“…Along with the increase of injection current density, higher EL emission intensity can be observed. It can be seen that the solar cells have some spatial inhomogeneity, on account of the internal resistance of the sample, which has been proved by Mochizuki et al [26]. It can also be seen that some bright points with weak current injections disappeared with increasing current density, indicating that the current distributions in the solar cells are different with different current injection densities.…”

Section: Methodsmentioning

confidence: 51%

Diagnosis of Perovskite Solar Cells Through Absolute Electroluminescence-Efficiency Measurements

et al. 2019

Self Cite

View full text Add to dashboard Cite

Two organic-inorganic halide CH 3 NH 3 PbI 3 perovskite solar cells prepared in the same experimental batch but having different power conversion efficiencies −18.46% and 17.15%-were investigated based on the absolute electroluminescence (EL) efficiency measurements and traditional I-V measurements. The possible factors that affect the power conversion efficiency were also investigated. Comparing the experimental I-V curves of the two solar cells, it was found that the short-circuit currents (J sc) were nearly the same; however, the open-circuit voltages (V oc) were markedly different. Moreover, the deduced I-V curves from the absolute EL efficiencies of the two solar cells, which were mainly affected by the material quality, were almost the same, proving that the device processing technology has a vital effect on V oc.

show abstract

Solar-cell radiance standard for absolute electroluminescence measurements and open-circuit voltage mapping of silicon solar modules

Cited by 25 publications

References 22 publications

Generalized Reciprocity Relations in Solar Cells with Voltage-Dependent Carrier Collection: Application to p - i - n Junction Devices

Generalized Reciprocity Relations in Solar Cells with Voltage-Dependent Carrier Collection: Application to p - i - n Junction Devices

Absolute electroluminescence imaging with distributed circuit modeling: Excellent for solar‐cell defect diagnosis

Diagnosis of Perovskite Solar Cells Through Absolute Electroluminescence-Efficiency Measurements

Contact Info

Product

Resources

About