Solar Cells Based on Cu(In, Ga)Se2 Thin-Film Layers

Kobulov, R. R.; Matchanov, N. A.; Ataboev, O. K.; Akbarov, F. A.

doi:10.3103/s0003701x19020063

Cited by 8 publications

(1 citation statement)

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“…To study the effect of the resistance value of the external load (R load ) on τ ∆n under illumination with monochromatic radiation of the short-wavelength absorption spectrum (λ 1 = 450 nm, hv 1 ≈ 2.76 eV and λ 2 = 520 nm, hv 2 ≈ 2.40 eV), a heterostructural solar cell was created with a photosensitive region of polycrystalline indium galliumcopper selenide (Cu(In,Ga)Se 2 -CIGS), E g ≈ 1.30 ± 0.03 eV, T = 300 K) [2]. Since thin-film CIGS solar cells are widely used in the creation of photovoltaic structures for various purposes [3], these studies are important.…”

Section: Methodsmentioning

confidence: 99%

Time of transition processes in a CdS-CIGS structural solar cells in the short-wave part of the absorption spectrum at different loading resistances

Kabulov¹,

Akbarov²,

Alimov³

2023

Nanosystems: Phys. Chem. Math.

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The work is devoted to the study of the influence of solar radiation in the short-wave part of the absorption spectrum at different loading resistances on the lifetime (τ ) of minority photogenerated charge carriers (∆n) of a thin-film solar cell based on Cu(In,Ga)Se 2 . It was found that with an increase in the generated photocurrent and the magnitude of the load resistance the lifetime of minority photogenerated charge carriers of a thin-film solar cell based on Cu(In,Ga)Se 2 increases. The obtained experimental results are interpreted by the charge exchange of defect states, which capture the injected and photogenerated electrons, as a result of which they cease to be active recombination centers.

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Section: Methodsmentioning

confidence: 99%