Solar cells from upgraded metallurgical-grade silicon purified by metallurgical routes

Côrtes, Andresa Deoclídia Soares; Silva, D. S.; Viana, G.A.; Motta, E. F.; Zampieri, Paulo Roberto; Mei, Paulo Roberto; Marques, F. C.

doi:10.1063/1.4800200

Cited by 5 publications

(1 citation statement)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A low-cost process for producing SOG-Si, metallurgical routes, was developed recently using MG-Si as a starting material. Metallurgical methods such as acid leaching, − plasma refining, , vacuum refining, − directional solidification, , and slag treatment , have been widely investigated because of the advantages of low cost and low level of energy consumption, among which acid leaching is a low-temperature method that consumes less energy and uses simple instruments. Therefore, acid leaching is one of the most commonly used methods and is always used as a viable pretreatment method prior to the main metallurgical refining processes.…”

Section: Introductionmentioning

confidence: 99%

Hydrometallurgical Purification of Metallurgical Grade Silicon with Hydrogen Peroxide in Hydrofluoric Acid

Lai

Huang

Xiong

et al. 2016

Ind. Eng. Chem. Res.

View full text Add to dashboard Cite

The effect of adding hydrogen peroxide (H2O2) as an oxidizing agent on purifying metallurgical grade silicon (MG-Si) by leaching with hydrofluoric acid (HF) was studied as a function of leaching temperature, particle size, leaching duration, and concentration of leaching agents. It was found that the extraction capacity for metallic impurities could be significantly enhanced with introduction of H2O2 into HF lixiviant with little dependence on HF concentration. Upon leaching with 1 mol·L–1 HF and 2 mol·L–1 H2O2 for only 0.25 h at 55 °C, the MG-Si purity could be upgraded from 99.74% to 99.96%, to 99.99% with further prolonging of leaching duration. The sensitivity sequences of precipitates to each etchant were obtained through revealing the microstructural evolution of MG-Si before and after etching. With the help of Raman spectrometry and transmission electron microscopy, the chemical etching mechanism is discussed.

show abstract