Solar control characteristics of chemically deposited lead sulfide coatings

Nair, P. K.; Ocampo, M.; Fernández, Arturo; Nair, M. T. S.

doi:10.1016/0165-1633(90)90008-o

Cited by 79 publications

(25 citation statements)

References 12 publications

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“…An increase in the band gap attributed to the Burstein-Moss effect [17]. The decrease in the band gap due to annealing was attributed to annealing which facilitates ordered packing of crystallites of molecules reducing the intermolecular defects within the material and these causes a reduction in the band gap value [19]. High band gap values ranging between 2.56 to 3.6 eV are in good agreement with results obtained by [18] and [6].…”

Section: Resultssupporting

confidence: 80%

Effect of Surface Passivation on CdxNi1-xS Thin Films Embedded with Nickel Nanoparticles

Mosiori

2017

PoS

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Abstract. Certain treatments done to binary CdS, such as incorporating Ni onto CdS produces ternary thin films may cause major optical parameters that have a number of applications including for solar cell device fabrication. In this paper, we report on the effect of surface passivation on the band gap and other related optical properties of CdNiS thin films. Thin films for Cd x Ni 1-x S were prepared on glass substrates by chemical solution method. Effects of surface passivation and variation of the volume of nickel ions on the optical properties CdS hence obtaining Cd x Ni 1-x S thin films was investigated. It was observed that the thin films hard an average Transmittance above 68 %, with reflectance below 25 % across UV-VIS-NIR region. A plot of (αhν) 2 versus hν gave energy band gap between 2.55-3.49 eV for as-grown samples and 2.82-3.50 eV for annealed samples. The passivated samples had band gap energy values within the range 2.85-3.12 eV. It was concluded that an increase in concentration of Cd 2+ and Ni 2+ ions in the reaction led to an increase the band gap while optical conductivity ranged between 3.78 10 11 -2.40 10 12 S -1 .

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Section: Resultssupporting

confidence: 80%

Effect of Surface Passivation on CdxNi1-xS Thin Films Embedded with Nickel Nanoparticles

Mosiori

2017

PoS

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“…Ternary compounds are found to be suitable material for optoelectronic device applications and good material for window layer solar cells [5]. Some of the films are investigated for use as super-ionic conducting materials [6][7][8][9][10][11]. The ternary compounds had been studied for efficient solar energy conversion materials [12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Solution growth technique for iron copper sulphide ternary thin film and its optical characteristics

Uhuegbu¹

2010

AJSIR

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Ternary thin films of Iron Copper Sulphide were grown on glass substrate using cheap and simple solution growth technique with EDTA, TEA and NH 3 as complexing agents. The deposited films were characterized using PYE-UNICO-UV-2102 PC Spectrophotometer and optical microscopy. The optical properties considered revealed high absorbance and reflectance but low transmittance in the UV; low values of absorbance and reflectance accompanied with high transmittance in the VIS. Over all, the absorptive coefficient ranged from 0. , the extinction coefficient ranged from 0.005 to 0.038, its direct band gap ranged from 2.4eV to 2.8eV, the indirect band gap ranged from 0.6eV to 1.0eV and its complex dielectric constant from (1.4 + j 0.005) to (5.2 + j 0.136). These properties suggest that the films are suitable for solar cell applications.

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“…The tin chalcogenides (SnTe, SnSe, SnS) are small band gap semiconductors which have long been of great interest due to their fascinating thermodynamic, vibration, electronic, and infrared properties [1,2]. These materials are important in several practical applications.…”

Section: Introductionmentioning

confidence: 99%

Role of surface passivation in the formation of Dirac states at polar surfaces of topological crystalline insulators: The case of SnTe(111)

et al. 2014

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We present ab initio density functional theory (DFT) calculation results for electronic and spin structures of both the Te-and Sn-terminated SnTe(111) polar surfaces. Rocksalt narrow-gap semiconductor SnTe belongs to the recently discovered class of topological crystalline insulators in which the topological nature of surface electronic states arises from the crystal symmetry combined with band inversion at the L point. We demonstrate that in contrast to earlier model calculations only trivial spin-split states propagating over the entire two-dimensional Brillouin zone emerge at the SnTe(111) surfaces owing to the surface potential effect which destroys weakly protected topological states. We show that the surface passivation eradicates the trivial surface states and recovers the even number of the helical spin-polarized topological Dirac cones centered at the¯ andM points prescribed for the topological crystalline insulator by the crystal symmetry.

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Solar control characteristics of chemically deposited lead sulfide coatings

Cited by 79 publications

References 12 publications

Effect of Surface Passivation on CdxNi1-xS Thin Films Embedded with Nickel Nanoparticles

Effect of Surface Passivation on CdxNi1-xS Thin Films Embedded with Nickel Nanoparticles

Solution growth technique for iron copper sulphide ternary thin film and its optical characteristics

Role of surface passivation in the formation of Dirac states at polar surfaces of topological crystalline insulators: The case of SnTe(111)

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