Solar light responsive ZnO nanoparticles adjusted using Cd and La Co-dopant photodetector

Gozeh, Bestoon Anwer; Karabulut, Abdulkerim; Yıldız, Abdülkadir; Yakuphanoğlu, F.

doi:10.1016/j.jallcom.2017.10.167

Cited by 95 publications

(22 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As shown in Figure 14a–d, When frequency increases, the peaks of R s decrease due to the existence of localized states and the inability of these states to follow the AC signal at high frequency. [ 52,53 ]…”

Section: Resultsmentioning

confidence: 99%

“…This deviation can be attributed to the existence of Li, the presence of barrier homogeneities, and interface states and series resistance. [52,53] The obtained n values in this study are compatible with the n values of Fe:TiO 2 -and Gd:TiO 2 -based heterojunctions previously reported by our group [42,54] and n values www.advancedsciencenews.com www.pss-a.com of undoped TiO 2 /n-Si and In-doped TiO 2 /n-Si heterojunctions reported by Ji et al [55] According to Table 2, the I 0 values of diodes, which is an indicator of the number of carriers that can surpass the barrier, increase with the Li doping. Also, the barrier heights of diodes have a decreasing trend due to the variation of reverse saturation current except for 6% Li:TiO 2 diode.…”

Section: Electrical Properties Of Fabricated Photodiodesmentioning

confidence: 99%

“…As shown in Figure 14a-d, When frequency increases, the peaks of R s decrease due to the existence of localized states and the inability of these states to follow the AC signal at high frequency. [52,53] Figure 12. The C-V graphs of Li:TiO 2 photodiodes for various Li-doping concentrations in the frequency range of 10-500 kHz.…”

Section: Electrical Properties Of Fabricated Photodiodesmentioning

confidence: 99%

See 2 more Smart Citations

The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping

Rüzgar

2020

Physica Status Solidi (a)

View full text Add to dashboard Cite

TiO 2 has received intense attention for optoelectronic applications due to its excellent properties, such as non-toxicity, low cost, and simple preparation. Herein, the influence of Li doping both on the structural and optical characteristics of TiO 2 thin films and on optoelectronic properties of TiO 2-based photodiodes is investigated. The root-mean-square (RMS) roughness values obtained from the atomic force microscopy (AFM) results and the optical bandgap energies calculated from the Tauc method vary between 3.40 and 24.53 nm and between 3.58 and 3.75 eV depending on the increase in Li doping, respectively. The ideality factor (n) values of the diodes, which provided information about the performance of diodes, are calculated between 5.92 and 9.74. The lowest n value of 5.92 is obtained for 2% Li-doped diode. All the fabricated diodes demonstrate a good photodiode behavior, and the maximum photoresponsivity value of 6.74 Â 10 À2 A W À1 is obtained for 10% Li:TiO 2. In addition, the C-V, G-V, and R s-V characteristics of diodes are examined for different frequencies. Li doping has improved the optoelectrical performance of the TiO 2-based photodiodes. Thus, the Li:TiO 2-based photodiode can be a candidate for optoelectronic applications.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Electrical Properties Of Fabricated Photodiodesmentioning

confidence: 99%

Section: Electrical Properties Of Fabricated Photodiodesmentioning

confidence: 99%

See 1 more Smart Citation

The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping

Rüzgar

2020

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…15 The current transient measurements for light-on and light-off conditions show response to the light of an optoelectronic device. 37 The current transient plots of the Au/CuCo 2 S 4 /p-Si device have been shown in Fig. 7 for various illumination intensities.…”

Section: Cuco 2 S 4 May Cause a Barrier Between The Al And P-mentioning

confidence: 99%

Ternary CuCo2S4 Thiospinel Nanocrystal-Coated Photodiode with Improved Photoresponsivity and Acceptance Angles for Optoelectronic Applications

Yıldırım

Koçyiğit

Sarılmaz

et al. 2019

Journal of Elec Materi

View full text Add to dashboard Cite

Ternary-structured thiospinels have attracted great attention in recent years for energy applications due to their attractive characteristics such as simple production, earth-abundant components and non-toxic nature. In this work, copper cobalt sulfide (CuCo 2 S 4 or carrollite) thiospinel nanocrystals were synthesized by a hot-injection method, and detailed electrical and optoelectronic characterizations were performed in a Schottky device. The synthesized nanocrystals were used as an interfacial layer between the Au metal and p-Si semiconductor to obtain an Au/CuCo 2 S 4 /p-Si device. The structural and morphological characterizations confirmed the crystallinity, nanostructure and composition of the CuCo 2 S 4 nanocrystals. The I-V and C-V measurements were employed to characterize the Au/CuCo 2 S 4 /p-Si device for various illumination intensities. The obtained device exhibited good rectifying and photodiode properties as well as good photocapacitance. The Au/CuCo 2 S 4 /p-Si device can be used and improved for optoelectronic applications.

show abstract

“…Both devices responded to the light illumination at reverse biases because the current values increased via increasing light intensity. This property caused by the generation of the electron-hole pairs in the interface of the devices owing to light illumination [32]. In addition, The devices can be employed as photodetector and photodiode applications because increasing current values at the reverse biases [33,34].…”

Section: Electrical Propertiesmentioning

confidence: 99%

The effect of the triangular and spherical shaped CuSbS2 structure on the electrical properties of Au/CuSbS2/p-Si photodiode

Yıldırım

Koçyiğit

Sarılmaz

et al. 2018

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

CuSbS 2 (Chalcostibite) crystals were synthesized by the hot-injection method as triangular and spherical shaped structures. The crystals were inserted by spin coating technique as interfacial layers between Au metal and p-Si to investigate their electrical and photoresponse properties via I-V measurements under various light intensities. The XRD measurements were performed to show the crystalline structure of the spherical and triangular CuSbS 2. The TEM images confirmed the triangular and spherical particle structures of the CuSbS 2 crystals. The I-V measurements were performed under dark, 20-100 mW light intensities with 20 mW interval for spherical and triangular CuSbS 2 photodiodes. In addition, diode parameters were extracted and discussed in the details. The results highlighted that triangular and spherical shaped structures have good photoresponse to the illumination and can be employed in the photodiode and photodetector applications.

show abstract

Solar light responsive ZnO nanoparticles adjusted using Cd and La Co-dopant photodetector

Cited by 95 publications

References 34 publications

The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping

The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping

Ternary CuCo2S4 Thiospinel Nanocrystal-Coated Photodiode with Improved Photoresponsivity and Acceptance Angles for Optoelectronic Applications

The effect of the triangular and spherical shaped CuSbS2 structure on the electrical properties of Au/CuSbS2/p-Si photodiode

Contact Info

Product

Resources

About

Solar light responsive ZnO nanoparticles adjusted using Cd and La Co-dopant photodetector

Cited by 95 publications

References 34 publications

The Optoelectrical Properties of Li: TiO2/p‐Si Photodiodes for Various Li Doping

The Optoelectrical Properties of Li: TiO2/p‐Si Photodiodes for Various Li Doping

Ternary CuCo2S4 Thiospinel Nanocrystal-Coated Photodiode with Improved Photoresponsivity and Acceptance Angles for Optoelectronic Applications

The effect of the triangular and spherical shaped CuSbS2 structure on the electrical properties of Au/CuSbS2/p-Si photodiode

Contact Info

Product

Resources

About

The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping

The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping