Solid composition and gallium and phosphorus vacancy concentration isobars for GaP

Abstract

A GaP decomposition source for producing a dimer phosphorus molecular beam free of gallium and tetramer phosphorus J.Thermodynamic calculations are presented which provide explicit expressions for the combined temperature and phosphorus partial pressure dependences of the Ga-and P-vacancy concentrations in GaP. This work extends the applicability of earlier results for the vacancy concentrations, obtained by ~n analysIs of the solidus data, from solid-liquid (i.e., LPE and LEe growth) to solid-vapor eqUlhbna (vapor growth, annealing, and diffusion). The calculations are represented in the form of Ga-and P-vacancy concentration and solid-composition isobars. In addition, the previously established correlation between the reciprocal of the nonradiative shunt-path lifetime (liT,,) and the relative Ga-vacancy concentration for GaP crystals prepared by a variety of techniques is transformed into a correlation with absolute vacancy concentrations. The electron-capture cross section of a Ga-vacancy behaving as a shunt path in p -type material is estimated to be ~4.S X 10-17 em'. Finally, the Ga-vacancy concentration isobars and the liT" correlation are discussed in the context of LPE, vapor growth, and annealing processes for GaP.

Effect of III/V Ratio on the Properties of Vapor Phase Epitaxial GaP

“…This leaves VGa, Dca, and ACa as the remaining possibilities. The lifetime associated with Ga vacancies can be predicted from the results of Jordan et al (10). The resultant lifetimes are 100 times longer than observed in this study.…”

“…In GaAs and GaP, these vacancies are apparently electrically and optically inactive, but in GaN they render the material always n-type (5,6). The Ga vacancy, although present in smaller numbers, appears to be a deep acceptor, and there are many reports that it acts either alone or paired with various donor impurities as a nonradiative recombination center which reduces the minority carrier lifetime and recombination efficiency (7)(8)(9)(10)(11). Photoluminescence and absorption peaks in the infrared are sometimes ascribed to such defects (12)(13)(14).…”

“…Manuscript submitted Nov. 10,1975; revised manuscript received Feb. 13, 1976. Any discussion of this paper wiI1 appear in a Discussion Section to be published in the December 1976 JOURNAL. All discussions for the December 1976 Discussion Section should be submitted by Aug. 1, 1976. Publication costs of this article were partially assisted by Hewlett-Packard.…”

“…Epitaxial films of PbTe and PbxSnl-xTe have been deposited for fabrication of infrared detectors, which are used for various thermal imagery applications. These films have been grown by vacuum evaporation techniques, vapor transport in flow reactors, and from liquid phases (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12). Films deposited by vacuum evaporation may vary in composition because of the nonequilibrium conditions which are inherent in this process.…”

Influence of furnace design on the thermal stress during directional solidification of multicrystalline silicon

“…It is well known that the generation of dislocation is related to thermal stresses induced by the inhomogeneous temperature distribution. Traditional theories [3,4] studied the relation between dislocation density and thermal stresses, and indicated the regions with an intensive dislocation multiplication by comparing von Mises stress to critical resolved shear stress (CRSS). They also illustrated that for dislocation generation in silicon the stresses along the {1 1 1} /1 1 0S slip system are the most important.…”