2003
DOI: 10.1246/cl.2003.888
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Solid Film Device to Visualize UV-Irradiation

Abstract: A solid film device capable of visualizing ultraviolet ray irradiation was created using a nanohetero-structured polysaccharide solid containing acid generator, dye and 2-propanol medium.

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Cited by 7 publications
(4 citation statements)
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“…The response mechanism of the membrane optode, after uptake of the analyte, can be based on the change in optical properties of the membrane matrix like: (i) absorbance or colour formation [7][8][9][10][11]; (ii) fluorescence [12,13]; and (iii) refractive index [14,15]. Recently, Kaburagi et al reported the preparation of a polymer film, which changes colour on exposure to ␥/UV-radiations [16]. The mechanism of this film is based on the generation of H + ions on coming in contact with the radiations, which further react with the chromophore "Fluoran" to produce the colour.…”
Section: Introductionmentioning
confidence: 99%
“…The response mechanism of the membrane optode, after uptake of the analyte, can be based on the change in optical properties of the membrane matrix like: (i) absorbance or colour formation [7][8][9][10][11]; (ii) fluorescence [12,13]; and (iii) refractive index [14,15]. Recently, Kaburagi et al reported the preparation of a polymer film, which changes colour on exposure to ␥/UV-radiations [16]. The mechanism of this film is based on the generation of H + ions on coming in contact with the radiations, which further react with the chromophore "Fluoran" to produce the colour.…”
Section: Introductionmentioning
confidence: 99%
“…Since the changes in acidity and polarity induced by EB seem to be very useful for nanolithography and nanofabrication, we synthesized a polysulfonamide (PSA) and copolymers consisting of sulfonamide and amide units. The thin films of these polymers can be applied to nanoscale color imaging by using the color forming reactions of an Ehrlich reagent with the aniline groups 24, 25…”
Section: Introductionmentioning
confidence: 99%
“…Ionizing radiation such as X-rays (EUV), electron beams (EB), and ion beams has attracted great attention as a future lithographic tool and also as a promising technique for fabricating nanoscale electronic devices by virtue of its extremely short wavelength. This is a way to overcome optical resolution limitations of UV and visible light due to their wavelength. The electron-beam direct writing (EBDW) technique is now quite advanced with resolution down to sub-10 nm, which would be impossible to achieve with light, and thus should be applicable to high-density recording devices. The major requirement of EB for recording devices is the EB-induced chemical changes providing optical or reflective-index differentiation between the exposed and unexposed regions. Although design and search for highly EB-sensitive materials are required for realizing such devices, little is known of the EB radiolysis of potential materials. …”
Section: Introductionmentioning
confidence: 99%
“…The electron-beam direct writing (EBDW) technique is now quite advanced with resolution down to sub-10 nm, which would be impossible to achieve with light, and thus should be applicable to high-density recording devices. [4][5][6][7][8][9][10][11][12] The major requirement of EB for recording devices is the EB-induced chemical changes providing optical or reflective-index differentiation between the exposed and unexposed regions. Although design and search for highly EB-sensitive materials are required for realizing such devices, little is known of the EB radiolysis of potential materials.…”
Section: Introductionmentioning
confidence: 99%