Solid-Liquid Interface Energy between Silicon Crystal and Silicon-Aluminum Melt

Abstract

By examining the surface morphologies of undercooled Si-20 at. pct Al alloy during and after the solidification process, it is determined that the critical undercooling for silicon to grow from lateral mode to intermediary mode DT* and that from intermediary mode to continuous mode DT** are 131 and 239 K, respectively. A method that predicts the solid-liquid interface energy of binary lateral growth materials on the basis of DT* and DT** has been developed. Formulas between the physical parameters and the solid-liquid interface energy have been obtained. The interface energy between silicon crystal and Si-Al melt predicted from DT* is almost equal to that from DT**. The present results of the solid-liquid interface energy predicted according to DT* and DT** obtained in Si-20 at. pct Al alloy are in very good agreement with the reported results of the grain-boundary method and the critical undercooling method from DT* and DT** obtained in pure silicon.

Silicon particle pinhole defects in aluminium–silicon alloys

“…1a2. Their presence is easily liquid aluminium at the eutectic temperature [34][35][36]) and aluminium grain boundary energies roughly between 0.2 and 0.6 J/m 2 [37,38], given the long hold times and high temperatures of heat-treatment, the formation of broad ridges characteristic of equilibration with a finite dihedral angle in the middle of the range between 0 and 180°makes sense. Along the linear burr-like ridges no intermetallic particles were observed; this was also the case for the grooves and the steps.…”

Crystal-Growth Transition and Homogenous Nucleation Undercooling of Bismuth

“…In the undercooling region from 49 K to 95 K (49°C to 95°C), the structure, as shown in The growth mode can be predicted in terms of the morphology of the recalescence interface and the grain morphology. [30,[32][33][34][35][36][37][38] When a faceted material grows in lateral mode, the difference in growth rates between different growth directions is large and the morphology of the growing crystal is platelike. This was observed in silicon and germanium by high speed camera.…”

“…This was observed in silicon and germanium by high speed camera. [30,[33][34][35] Obviously, the parallel platelike growing crystals in the solidification process will result in the formation of a layered structure after solidification. As shown in Figure 2(a), the cross-sectional structure of bismuth shows layered crystals when the undercooling is less than 49 K (49°C).…”

“…These can be observed by high speed camera. [30,[33][34][35] For a monocomponent material, anisotropic dendrites in the solidification process develop into elongated crystals after solidification. When the cross section is the transverse of an elongated crystal, an equiaxial grain is obtained.…”

“…The values of DT 1 and DT 2 can be determined by observing the morphologies of the recalescence interface and the growing crystal of the undercooled sample during solidification [30,[32][33][34][35] and examining the surface morphology after solidification. [33][34][35][36][37][38] The characteristics of the solidification microstructures within grains in the undercooled regions of lateral, intermediate, and continuous growth have not been reported.…”