Solid phase reaction of Ti with Si−Ge layers prepared by Ge-implantation

Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applications

“…According to the investigations, presence of germanium in Ti silicide affects obviously not only the phase formation temperature but also its morphological stability: A low resistance film of Ti germanosilicide can be formed at a lower temperature than that of Ti silicide was required. 7 In addition, the alloys get a poor morphological stability due to the lowering of agglomeration temperature with germanium ͑Ge͒ composition. [8][9][10] Therefore, addition of Ge to Ti silicide seems to provide a desirable trend to format Ti-based NCs at a relatively low temperature.…”