Solid single-source metal organic chemical vapor deposition of yttria-stabilized zirconia

MOCVD of YSZ coatings using β-diketonate precursors

“…YSZ growth was mass-transfer limited above 827 • C and surface-reaction limited below 827-875 • C. This result was consistent with that of Kim et al [17] and Dubourdieu et al [24], who found the surface-reaction limited regime transitioned to the masstransfer limited regime above 740-770 • C. Growth rates reached a maximum between 827 and 875 • C, which was also consistent with the work of Pulver et al [13], Kim et al [17], Dubourdieu et al [24], and Jun et al [25], who observed a maximum in the YSZ growth rate at 770-840 • C. The activation energy of ∼51 kJ mol −1 determined from this work is also relatively close to the activation energies reported by Pulver et al [13] and Garcia et al [26] of 48 and 58 kJ mol −1 , respectively.…”

Thermal barrier coatings produced by chemical vapor deposition

“…Then, we have achieved a high deposition efficiency of 25-35% and the highest deposition rate of 108 mm h 21 by thermal CVD [17]. This value is higher than typical yields in conventional thermal-activated CVD (10 -15%) [15], and comparable to that obtained by solid precursor powder delivery system (25%) [16].…”

“…However, deposition rates of CVD have been usually low typically below 10 mm h 21 , and then many efforts have been made to enhance the deposition rates of CVD for TBCs [13 -19]. Recently, the use of auxiliary energy sources in CVD such as plasma and laser have resulted significant enhancement of deposition rates [16,18,21]. In particular, we have demonstrated that deposition rates have significantly improved to as high as 660 mm h 21 in laser CVD [21].…”

“…Dubourdieu et al [16] employed a solid single-source delivery system to deposit YSZ films from Y(thd) 3 and Zr(thd) 4 precursors at 723 -1123 K and 0.40 kPa. The precursors mixed in the desired ratios were packed into a pyrex tube.…”

Modeling for CVD of Solid Oxide Electrolyte

“…A number of special precursor delivery systems have been designed to address these challenges [11][12][13][14][15] Many uses of DLI-MOCVD involve deposition of thin films for electronic applications. In these applications, the substrate temperature is low and the deposition rate is relatively slow (< 1 µm/hr).…”