Solid Solubility of SnO2 in In2O3.

Ohya, Yutaka; Ito, Tomokazu; Kaneko, Masahiro; Ban, Takayuki; Takahashi, Yasutaka

doi:10.2109/jcersj.108.1261_803

Cited by 18 publications

(22 citation statements)

References 3 publications

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“…5). [28][29][30][31] The fractions of tin found in each cation site (Table I) indicate that tin prefers to substitute into the higher symmetry b site, in agreement with the Mössbauer study of Nadaud et al 12 No preference would be reflected in a Sn occupancy of ϳ3% and ϳ9% in bulk and nano-ITO, respectively, in both b and d sites. We have performed other synchrotron experiments on the same nano-ITO samples, and have not detected the presence of such reflections (see Fig.…”

Section: B Rietveld Analysessupporting

confidence: 77%

“…12,[29][30][31]33 Studies of this phase by in situ high-temperature synchrotron diffraction are in progress. In a There is disagreement in the literature regarding the temperature at which it forms, however all reports agree that the temperature is higher than 1200°C, and the more recent reports have observed it only at T higher than 1300°C.…”

Section: B Rietveld Analysesmentioning

confidence: 99%

See 1 more Smart Citation

Defect structure studies of bulk and nano-indium-tin oxide

González

Mason

Quintana

et al. 2004

Journal of Applied Physics

171

129

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Reduced conductivity in poly(3,4-ethylenedioxythiophen)-poly(styrene sulfonate) and indium tin oxide nanocomposite for low indium tin oxide content J. Appl. Phys. 105, 054318 (2009); 10.1063/1.3080154 Impedance spectroscopy and optical characterization of polymethyl methacrylate/indium tin oxide nanocomposites with three-dimensional Voronoi microstructuresThe defect structure of bulk and nano-indium-tin oxide was investigated by a combination of experimental techniques, including high-resolution synchrotron x-ray diffraction, extended x-ray absorption fine structure, and time-of-flight neutron diffraction on powder specimens. The structural results include atomic positions, cation distributions, and oxygen interstitial populations for oxidized and reduced materials. These structural parameters were correlated with theoretical calculations and in situ electrical conductivity and thermopower measurements as well as existing defect models, with special reference to the model of Frank and Köstlin [G. Frank and H. Köstlin, Appl. Phys. A 27, 197 (1982)].

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Section: B Rietveld Analysessupporting

confidence: 77%

Section: B Rietveld Analysesmentioning

confidence: 99%

Defect structure studies of bulk and nano-indium-tin oxide

González

Mason

Quintana

et al. 2004

Journal of Applied Physics

171

129

View full text Add to dashboard Cite

show abstract

“…In a previous report, the lattice constant determined by XRD 4) 2À is inserted to the O vacancy sites during the random Sn 4þ substitution, the ordered array of O vacancy sites of bixbyite structure may be disrupted or even become more randomly arranged. We mentioned that the bixbyite structure is a derivative of the fluorite structure, but the O vacancies are present and well ordered.…”

Section: 2mentioning

confidence: 97%

“…3) It is known that the solubility of SnO 2 into In 2 O 3 crystals is less than 7 mass% at 1500 C, 4) and thus the 10 mass% content is beyond the solubility limit. In sputtered ITO thin films, however, Sn atoms can dissolve into In 2 O 3 beyond the solubility limit and form a supersaturated solid solution.…”

Section: Introductionmentioning

confidence: 99%

Transmission Electron Microscopy Study of Sn-Doped Sintered Indium Oxide

et al. 2009

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Microstructures of Sn-doped sintered indium oxide were investigated by transmission electron microscopy. It was found that Sn-rich nanosized precipitates were formed inside the ITO grains, in addition to the secondary phases of In 4 Sn 3 O 12 formed at grain boundaries. By nanobeam electron diffraction analysis, the crystal structure of the nanosized precipitates was determined to be the fluorite structure, which is different from the bixbyite structure of the ITO matrix. The structural change in the Sn-rich nanosized precipitates can be explained by the insertion of O 2À ions in the vacancy sites of the bixbyite structure during the substitution of In 3þ sites by Sn 4þ .

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“…Bates et al 14 observed In 4 Sn 3 O 12 at 1552°C and determined its lattice parameters. Ohya et al 15 proposed that a hexagonal phase first appeared at 1380°C. Heward and Swenson 3 observed the In 4 Sn 3 O 12 compound in the high temperature range of 1350°C to 1650°C.…”

Section: Introductionmentioning

confidence: 99%

Density-Functional Study of the Electronic Structure and Optical Properties of Transparent Conducting Oxides In4Sn3O12 and In4Ge3O12

Zhang

Wang

2011

Journal of Elec Materi

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are studied by the projector-augmented-wave method based on the density-functional theory within the generalized gradient approximation. The cation ordering of the two compounds is explored by means of first-principles calculations. It is found that the valence-band maximum of the materials is determined by the d states of metal elements and O-2p states; the conductionband minimum is occupied by an admixture of the O-2p states, In-5s states, and Sn-5s or Ge-4s states, respectively. The two compounds are direct-bandgap semiconductors. The low intensity of the absorption coefficient, reflectivity, and loss function shows that they are good transparent conducting oxides.

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Solid Solubility of SnO2 in In2O3.

Cited by 18 publications

References 3 publications

Defect structure studies of bulk and nano-indium-tin oxide

Defect structure studies of bulk and nano-indium-tin oxide

Transmission Electron Microscopy Study of Sn-Doped Sintered Indium Oxide

Density-Functional Study of the Electronic Structure and Optical Properties of Transparent Conducting Oxides In4Sn3O12 and In4Ge3O12

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