Solid-state selenization of printed Cu(In,Ga)S2 nanocrystal layer and its impact on solar cell performance

Advances in nanostructured thin film materials for solar cell applications

“…The increase in the thickness of thin film with the substrate temperature [76] is related with the decrease in sticking coefficient as well as the increase in the density of the film due to crystallization. The absorber layers in PV technology are categorized according to their thickness represented in Figure 8 [77][78][79][80][81]. The thinnest material used in thin film PV technology is CuInSe 2 while the thickest one is c-Si.…”

Optimized annealing regime of CuGaSe2nanoparticles prepared by solvothermal method

“…Taking into consideration that a Cu‐rich layer guarantees its p‐type structure, the obtained ratio of Cu to Ga is well, while the value of Se is low. For solving this problem, an extra selenization process is recommended after deposition of CGS nanoparticles . The ratio of Cu/Ga = 1.95 was obtained for the sample 6 which is closed to sample 5, but the ratio Se/(Cu + Ga) is 0.61 for the sample 6 which is slightly lower than that of sample 5.…”

Advances in nanostructured homojunction solar cells and photovoltaic materials

“…The combination of proper passivation solutions and multiple exciton generations (MEG) in the homojunction QD solar cells will increase their efficiency in the near future. GaAs, and selenium in CdSe or ZnSe were reported to be toxic, thus they are suggested to be used with a great care [35]. The nontoxic nature of Cu2O, InP, Si, CIS, and InGaN was reported by different groups and has been verified by the material safety data sheet (MSDS) [139][140][141].…”

“…Homojunction solar cells can be easily made from doped and undoped intrinsic layer (i-layer) incorporated into the p-n junction, thus forming either p-i-n or n-i-p structures. The idea of applying an intrinsic layer in the p-n junction is to provide a buffer layer between p-n junction to reduce defect densities and moderate lattice strains [35,36]. The intrinsic layer reduces the probability of exciton recombination in the absorbing layer for both p-i-n and n-i-p configurations.…”

“…Carrier recombination is a major problem for most of the solar cells. The presence of the intrinsic layer in the solar cell provide a drift assisted transport based on the mechanism that can extend electric field over the whole intrinsic layer, which allows sufficient time for the carriers to be separated, thus the recombination will be minimized [35]. The i-layer is frequently applied for adjustment of the bandgap profile in the solar cell [38][39][40].…”