Soluble cyclopolymers based on 1,1,2,3,3-pentafluoro-4-(1,1,1,3,3,3-hexafluoro-2-hydroxy-2-propyl)-1,6-heptadiene: Synthesis and chemical transformations

Polymers for nanolitography: New strategy of the design and synthesis of copolymers based on methacrylic acid derivatives with cyclobutyldicyclopropylmethyloxymethyl, 3-sulfolanyl, and 1-perfluoroethylcyclohexyl pendant groups

“…Thus in the 1 H NMR spectrum of the modified copolymer, the intensity of the signal at δ 3.54 ppm (hexafluoroisopropanol protons) decreases and new signals appear at 0.5-0.7 ppm (cyclopropane protons) and at 1.05-1.20 and 1.4-2.4 ppm (cyclobu tane protons) [3]. The degree of protection of the hexafluoroisopropanol moieties by these groups is 36 mol %.…”

“…The advancement towards the 65 nm resolving power is associated with exceptional complication of the requirements to the protective groups; these groups must make contribution to balancing a number of properties of photoresists such as high light sensitivity, stability during plasma chemical etching, resolving power, and irregularity of the image edge. For the development of the latest generation positive resists for nanolithography based on 193 nm radiation, a new approach was proposed that distributed these tasks between two chemically different protecting groups [3].…”

“…One more protecting group has been developed based on cyclobutyldicyclopropylmethanol, which was syn thesized by a reported procedure [15]. The chlorome thyl ether of this tertiary alcohol was prepared by the procedure reported in [3]. These groups were intro duced into the pendant chains of the quaterpolymers by the reaction of the chloromethyl ether with hexafluoroisoropanol moieties of the copolymers by the procedure that we developed previously [3].…”

“…The photolithographic testing was carried out by procedures developed in our previ ous works [3]. The system had high light sensitivity: the optimal exposure dose was 12 mJ/cm 2 .…”

“…Impor tant intermediate stages in implementation of this task are successful mastering and development of lithogra phy using the 193 nm radiation from an ArF excimer laser. The adaptation of this lithography to the manu facture of microcircuits with 65 nanometer design rules is associated with the solution of quite serious problems concerning the development of the corre sponding resists with chemical amplification [3].…”