Soluble oxide gate dielectrics prepared using the self-combustion reaction for high-performance thin-film transistors

Bae, Eun Jin; Kang, Young Hun; Han, Mijeong; Lee, Changjin; Cho, Song Yun

doi:10.1039/c4tc00874j

Cited by 51 publications

(44 citation statements)

References 27 publications

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“…The poor substrate wettability of highly doped silicon, which limits the selection of solvents and solutes, as well as film quality need to also be considered, which affect the current leakage, bulk and interfacial trap densities, as well as capacitance quality. [20][21][22] Oxygen plasma treatment is an effective method to control film quality and device performance. It is commonly used on dielectric surfaces and semiconducting active or back channels.…”

Section: Introductionmentioning

confidence: 99%

Oxygen plasma assisted high performance solution-processed Al2Ox gate insulator for combustion-processed InGaZnOx thin film transistors

Wang

Zhou

et al. 2015

Journal of Applied Physics

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The effects of oxygen-plasma treatment on solution-processed Al2Ox gate dielectrics for InGaZnOx (IGZO) thin film transistors (TFTs) are investigated in this paper. Thin films of amorphous Al2Ox are successfully fabricated by annealing temperature of 300 °C. Utilizing oxygen-plasma treated gate dielectrics, combustion-processed IGZO TFTs, which are annealed at a temperature of 300 °C, show a mobility of 7.3 cm2 V−1 s−1, a threshold voltage of −0.3 V, an on-off current ratio of 1 × 105, a subthreshold swing of 160 mV/decade, when operating with a voltage ranging from −2 V to +5 V. Our experimental results demonstrate that oxygen-plasma treatment can remarkably improve dielectric performance. This is presumably due to the passivation of interfacial and bulk traps, and the reduced concentration of oxygen vacancies.

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Section: Introductionmentioning

confidence: 99%

Oxygen plasma assisted high performance solution-processed Al2Ox gate insulator for combustion-processed InGaZnOx thin film transistors

Wang

Zhou

et al. 2015

Journal of Applied Physics

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“…Several solution-based chemical synthetic routes have been exploited for the preparation of these oxides because of their simplicity, versatility, and scale-up capability; however, the application of solution combustion synthesis to the production of thin films for TFT applications was first reported in 2011 [4]. Since then, significant research efforts have been put on the development of semiconductor materials such as indium oxide and indium, zinc tin and gallium-based multicomponent oxides [13][14][15][16] and more recently of dielectric materials [5,6,17]. However, most of the research as focussed on the use of toxic solvents (2-methoxyethanol) and scarce materials (indium), which can be a major drawback in the upscaling of this technology.…”

Section: Solution-based Oxide Electronicsmentioning

confidence: 99%

“…Solution-based high-κ dielectrics, such as Al 2 O 3 , HfO 2 , ZrO 2 , have demonstrated high performance and suitability for the application in metal oxide semiconductor-based TFTs [5,6,17,[24][25][26][27][28]. Amongst these, aluminium oxide is one of the most developed materials from solution synthesis since several aluminium precursors salts are readily availability at low cost.…”

Section: Dielectric Oxidesmentioning

confidence: 99%

Solution Combustion Synthesis: Applications in Oxide Electronics

Branquinho¹,

Santa²,

Carlos³

et al. 2016

Developments in Combustion Technology

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Oxide-based electronics have been well established as an alternative to silicon technology; however, typical processing requires complex, high-vacuum equipment, which is a major drawback, particularly when targeting low-cost applications. The possibility to deposit the materials by low-cost techniques such as inkjet printing has drawn tremendous interest in solution processible materials for electronic applications; however, high processing temperatures still required. To overcome this issue, solution combustion synthesis has been recently pursued. Taking advantage of the exothermic nature of the reaction as a source of energy for localized heating, the precursor solutions can be converted into oxides at lower process temperatures. Theoretically, this can be applied to any metal ions to produce the desired oxide, opening unlimited possibilities to materials' composition and combinations. Solution combustion synthesis has been applied for the production of semiconductor thin films based on ZnO, In 2 O 3 , SnO 2 and combinations of these oxides, and also for high κ dielectrics (Al 2 O 3 ). All of which are required for numerous electronic devices and applications such as fully oxide-based thin-film transistors (TFTs). The properties of produced thin films are highly dependent on the precursor solution characteristics; hence, the influence of several processing parameters; organic fuel, solvent and annealing temperature was studied. Although precursor solution degradation/oxide formation mechanisms are not yet fully understood, particularly for thin films, we demonstrate that high-performance devices are obtained with combustion solution-based metal oxide thin films. The results clearly show that solution combustion synthesis is becoming one of the most promising methods for low-temperature flexible electronics.

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“…A solution in 2-methoxyethanol containing [Al(acac) 3 ] and Al(NO 3 ) 3 as oxidizer was spin-coated on ITO (4000 rpm, 30 s), which gave after self-combustion for 1 h at 250 ∘ C aluminum oxide, which was used as high-material in a metal-oxide thin film transistor 46 . Highly soluble [Al(acac) 3 ] or [Ga(acac) 3 ] served as precursors in the low-temperature deposition of thin films of Al 2 O 3 or Ga 2 O 3 in supercritical carbon dioxide (scCO 2 ).…”

Section: Group 13 Elements (Al Ga In)mentioning

confidence: 99%

Advances in Deposition of Main‐Group Metal Oxides and Rare‐Earth Oxides from Metal Enolates

Lang

Adner

Georgi

2016

Patai's Chemistry of Functional Groups

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This chapter is an update of a review published by our group elsewhere in Patai's Series; in addition, in this volume, chapters present the recent advances in the deposition of metals and transition‐metal oxides, all derived from metal enolates. Materials featuring group 3 ‐ 12 elements have attracted great technological and scientific attention during the last decades because of their outstanding chemical and physical properties. They are widely used in industry, including a variety of catalyst supports, coatings, as dielectrics for semiconducting devices, and as sensors.

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Soluble oxide gate dielectrics prepared using the self-combustion reaction for high-performance thin-film transistors

Abstract: We report the fabrication of high-performance metal oxide thin-film transistors (TFTs) with AlOx gate dielectrics using combustion chemistry in a solution process to provide energy to convert oxide precursors into oxides at low temperatures.

Cited by 51 publications

References 27 publications

Oxygen plasma assisted high performance solution-processed Al2Ox gate insulator for combustion-processed InGaZnOx thin film transistors

Oxygen plasma assisted high performance solution-processed Al2Ox gate insulator for combustion-processed InGaZnOx thin film transistors

Solution Combustion Synthesis: Applications in Oxide Electronics

Advances in Deposition of Main‐Group Metal Oxides and Rare‐Earth Oxides from Metal Enolates

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