Solution-based Ag-doped ZnSe thin films with tunable electrical and optical properties

Abstract

Thin film transistors fabricated using ZnSe thin films synthesized using chemical bath deposition.

Hybrid Density Functional Theory Study on Structural and Optoelectronic Properties of ZnSe1–xTex for the Photocatalytic Applications

“…ZnSe, as a typical II–IV semiconductor, has received great attention due to its applications in short-wavelength lasers, blue laser diodes, color displays, light-emitting diodes, biomedical sensors, high-density optical storages, and photodetectors. , ZnSe is the direct bandgap semiconductor, crystallized in face-centered cubic zincblende (ZB) and hexagonal wurtzite (WZ) phases. It has stronger visible-light absorption than TiO 2 . − Furthermore, the conduction band minimum of ZnSe is more negative than the TiO 2 , which manifests its applications in the solar cells and organic degradation. , Although the conduction band (CB) edge of ZnSe is suitable for the photocatalytic reduction of CO 2 , it shows low photocatalytic activity because of the recombination of photogenerated electron–hole pairs.…”

“…ZnSe, as a typical II−IV semiconductor, has received great attention due to its applications in short-wavelength lasers, blue laser diodes, color displays, light-emitting diodes, biomedical sensors, high-density optical storages, and photodetectors. 8,9 ZnSe is the direct bandgap semiconductor, crystallized in face-centered cubic zincblende (ZB) and hexagonal wurtzite (WZ) phases. It has stronger visible-light absorption than TiO 2 .…”

Observation of Different Charge Transport Processes and Origin of Magnetism in rGO and rGO-ZnSe Composite

“…Zinc-based semiconductor nanostructures have attracted much more attention among various semiconductors due to application in the field of optoelectronics. , Zinc selenide (ZnSe; band gap, 2.67 eV) is considered as an excellent candidate for photodetectors, blue laser diodes, light-emitting diodes, sensors, and photocatalysts. ,− However, the low electrical conductivity and carrier mobility in ZnSe are the main disadvantages in the field of optoelectronic application. Recent studies have shown that forming composite with carbon nanotubes or graphene is a pathway to sort out this problem. ,, Charge carrier mobility (μ), like other transport parameters, is of great importance for semiconductor device applications.…”

Study of Structural Properties of Ni3Pb2S2 Films

“…For example, the obtained films could be characterized by using several techniques such as spectroscopic ellipsometry 1,2 , Raman Spectroscopy [3][4][5] ,electrochemical impedance spectroscopy [6][7][8] ,profilometer 9,10 , R u t h e r fo r d backscattering spectrometry [11][12][13][14] , scanning tunneling microscopy [15][16][17] , and atomic force microscopy [18][19][20] . These films exhibit excellent chemical, optical, physical and electrical properties.…”