Cu In Se2 thin films are very important semiconductor material for solar cell applications because of chemical stability, direct band gap and high optical absorption coefficient. In this work, these films have been prepared by using different deposition techniques such as electrodeposition, solvothermal, vacuum evaporation, hydrothermal and pulsed electrode position technique. Cu In Se2 thin films were fully characterized by using field emission scanning electron microscopy, X-ray diffraction, Energy dispersive X-ray analysis, atomic force microscopy, UV-Visible spectrophotometer and Raman spectroscopy in order to study physical properties.