Solution growth of GaN on sapphire substrate under nitrogen plasma

Ozawa, Tomohiro; Dohi, Minoru; Matsuura, Takeshi; Hayakawa, Y.

doi:10.1016/j.jcrysgro.2008.09.051

Cited by 4 publications

(2 citation statements)

References 15 publications

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“…Although plasma enhanced methods have been successful in growing thin film GaN, they were unable to meet the growing demand for GaN substrates until now. For instance, plasma‐assisted molecular beam epitaxy (PAMBE) which proved its reliability in terms of GaN and other III‐nitrides layers, taking advantage of a remote nitrogen radio frequency (RF) plasma source 8 and the solution growth of 3 µm GaN layers on sapphire with the assistance of 2.45 GHz microwave excited nitrogen plasma 9.…”

Section: Introductionmentioning

confidence: 99%

Plasma enhanced growth of GaN single crystalline layers from Ga vapour

Zwierz

Golka

Kachel

et al. 2013

Cryst. Res. Technol.

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We present an alternative approach to grow thick GaN single crystalline layers from Ga vapour, transported by an N 2 carrier gas flow, and from nitrogen, excited very near the substrate by 2.45 GHz microwaves at pressure in the 200-800 mbar range. Crystal growth requires high stability of process parameters, especially of plasma operation. A major challenge arose from temperature dependent changes in cavity resonance. Optical emission spectroscopy (OES) was used for plasma characterization while the grown layers were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD).

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Section: Introductionmentioning

confidence: 99%

Plasma enhanced growth of GaN single crystalline layers from Ga vapour

Zwierz

Golka

Kachel

et al. 2013

Cryst. Res. Technol.

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“…The growth of thicker layers by this process, which can be considered as bulk crystals, poses considerable problems, e.g., NH 4 Cl byproduct formation as limitation for the HVPE process duration. For this reason, alternative growth techniques, i.e., high pressure solution growth, flux growth, ammonothermal growth, and plasma-enhanced approaches from solution, melt, and vapor, were explored. To find an optimal one is a goal of ongoing research. − …”

Section: Introductionmentioning

confidence: 99%

Gas-Phase Reactions Regarding GaN Crystal Growth in a Carbon-Based Transport System: A Quantum Chemical Study

Gadzhiev

Сенников

Петров

et al. 2013

Crystal Growth & Design

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To elucidate an experimentally observed increase of GaN crystal growth rate in the Ga(l)-graphite-NH3(g) system (Jacobs, K. et al. J. Cryst. Growth 2010, 312, 750–755), a gas-phase chemical model of the chemical vapor deposition (CVD) process was developed in a quantum chemical study. The reaction mechanisms in a gas-phase Ga/HCN/NH3 system were predicted using density functional theory (DFT) and post-Hartree–Fock methods including conventional DFT (B3LYP/cc-pVTZ) and coupled cluster (CCSD/cc-pVTZ) theory levels. Activation and reaction energies were refined with a CCSD(T)/aug-cc-pVTZ//B3LYP/cc-pVTZ composite approach. A relatively modern variant of the coupled cluster theory (ROCCL method) in conjunction with the aug-cc-pVDZ basis set for H, N, and aug-cc-pV(D+d)Z for Ga atoms) was employed to investigate bond cleavage reaction pathways. Reactions in Ga(2P) + NH3 and Ga(2P) + HCN gas-phase systems and reactivity of products of the Ga(2P) + HCN reaction (HGaCN and HGaNC) with both Ga (atomic vapor) and NH3 (reactive diluent gas) were included in the model of the chemical transport. Elementary steps involving newly reported cyclic (HGaCNGa) containing intermediates were considered. The role of HCN as a chemical transport reagent in GaN CVD was established unambiguously. A comparative study of minimum energy pathways (MEPs) for reactions in the Ga/NH3 and Ga/HCN/NH3 systems supported the experimental observation of the GaN deposition rate increase.

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Growth of Bulk GaN Crystals

Feigelson

Paskova²

2011

Comprehensive Semiconductor Science and Technology

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Solution growth of GaN on sapphire substrate under nitrogen plasma

Cited by 4 publications

References 15 publications

Plasma enhanced growth of GaN single crystalline layers from Ga vapour

Plasma enhanced growth of GaN single crystalline layers from Ga vapour

Gas-Phase Reactions Regarding GaN Crystal Growth in a Carbon-Based Transport System: A Quantum Chemical Study

Growth of Bulk GaN Crystals

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