Solution Growth on Concave Surface of 4H-SiC Crystal

Daikoku, Hironori; Kado, Motohisa; Seki, Akinori; Sato, Kazuaki; Bessho, Takeshi; Kusunoki, Kazuhiko; Kaidou, Hiroshi; Kishida, Yutaka; Moriguchi, Koji; Kamei, Kazuhito

doi:10.1021/acs.cgd.5b01265

Cited by 55 publications

(33 citation statements)

References 15 publications

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“…Hence, the global uid ow was assumed to be determined by electromagnetic convection. However, as reported in our previous study, [17][18][19][20] the crystal growth is affected signicantly by the subsurface ow near the seed crystal. This suggests that the Marangoni convection and centrifugal forced convection had also contributed to the crystal growth together with electromagnetic convection.…”

Section: Experimental and Modelingsupporting

confidence: 63%

Flow modification enhancing the growth rate in top seeded solution growth of SiC crystals

Shin

et al. 2019

RSC Adv.

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Section: Experimental and Modelingsupporting

confidence: 63%

Flow modification enhancing the growth rate in top seeded solution growth of SiC crystals

Shin

et al. 2019

RSC Adv.

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“…Both inadequate growth rates and solvent inclusions in the grown crystal caused by interfacial roughening are important issues in the production of bulk SiC crystal. To maintain a smooth interface under rapid growth, it is important to achieve high carbon solubility and suitable supersaturation by incorporating additives into the Si-based solvent [3][4][5][6] . For example, rapid growth (exceeding 2 mm/h) while maintaining a smooth interface has been achieved using Si-40 mol%Cr-based solvent 7) , although supersaturation was not speci cally discussed.…”

Section: Introductionmentioning

confidence: 99%

Measurement and Thermodynamic Analysis of Carbon Solubility in Si–Cr Alloys at SiC Saturation

2017

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Si-Cr alloy is one of the predominant solvents for rapid solution growth of 4H-SiC crystals. The solubilities of carbon in Si-40 mol%Cr alloy at SiC saturation at 1773-2273 K and in Si-Cr alloys of various chromium contents at 2073 K were measured by equilibrating the Si-Cr alloy with a 4H-SiC single crystal. Carbon solubility in Si-40 mol%Cr alloy increased with temperature from 0.22 mol% at 1773 K to 3.59 mol% at 2273 K. At 2073 K, carbon solubility at SiC saturation increased with the chromium content in the liquid from 0.18 mol% in Si-20 mol%Cr to 16.4 mol% in Si-80 mol%Cr. A thermodynamic analysis of the Si-Cr-C alloy was also conducted. Although the sub-regular solution model is often adopted to estimate phase relations in solution systems, this predicted a carbon solubility in Si-40 mol%Cr at SiC saturation more than two times higher than the measured value. In contrast, a quasi-chemical model that considered the competition between substitutional Si and Cr atoms bonding to interstitial carbon atoms reproduced the activity coef cient of carbon in Si-Cr alloys of 60-100 mol%Si composition, in which the carbon solubility at SiC saturation was less than 1.5 mol%, fairly well. This quasi-chemical model enabled the precise phase relation to be evaluated when designing the solution growth of SiC using a Si-Cr solvent.

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“…In the solution growth of bulk 4H-SiC, the C face of n-type 4H-SiC is generally selected as the seed crystal [ 25 ]. Therefore, the results obtained by using the C face of n-type 4H-SiC with light nitrogen doping (resistivity: 0.207 Ω·cm) are presented here.…”

Section: Resultsmentioning

confidence: 99%

Contribution of Dislocations in SiC Seed Crystals on the Melt-Back Process in SiC Solution Growth

2022

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The melt-back process has a significant effect on the quality of solution-grown SiC crystals. However, the phenomena surrounding the SiC dissolution into the molten alloy during the melt-back process have not been clarified. In this study, the behavior of 4H-SiC dissolution into molten alloy was investigated by using high-temperature in situ observation and subsequent KOH etching, and the effects of different doping conditions and crystal polarity were studied. Local dissolutions with hexagonal pyramid-shape originating from threading screw dislocation (TSD) were observed on the C face of n-type SiC with light nitrogen doping. Our analysis of their behavior revealed that the process was governed by the spiral dissolution. In addition to the dissolution at TSD, local dissolutions at threading-edge dislocations were observed on the Si face of the same crystal. The shape of the local dissolution at the dislocation was significantly affected by the doping conditions and the polarity of the SiC crystal. This local dissolution may occur during the melt-back process, suggesting that it is important to promote the dissolution while maintaining a smooth interface through the selection of the seed crystal and by keeping the degree of interface undersaturation small.

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Solution Growth on Concave Surface of 4H-SiC Crystal

Cited by 55 publications

References 15 publications

Flow modification enhancing the growth rate in top seeded solution growth of SiC crystals

Flow modification enhancing the growth rate in top seeded solution growth of SiC crystals

Measurement and Thermodynamic Analysis of Carbon Solubility in Si–Cr Alloys at SiC Saturation

Contribution of Dislocations in SiC Seed Crystals on the Melt-Back Process in SiC Solution Growth

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