Solution-Processable ZnO Thin Film Memristive Device for Resistive Random Access Memory Application

Abstract

The memristive device is a fourth fundamental circuit element with inherent memory, nonlinearity, and passivity properties. Herein, we report on a cost-effective and rapidly produced ZnO thin film memristive device using the doctor blade method. The active layer of the developed device (ZnO) was composed of compact microrods. Furthermore, ZnO microrods were well spread horizontally and covered the entire surface of the fluorine-doped tin oxide substrate. X-ray diffraction (XRD) results confirmed that the synthesized ZnO was oriented along the c-axis and possessed a hexagonal crystal structure. The device showed bipolar resistive switching characteristics and required a very low resistive switching voltage (±0.8 V) for its operation. Two distinct and well-resolved resistance states with a remarkable 103 memory window were achieved at 0.2-V read voltage. The developed device switched successfully in consecutive 102 switching cycles and was stable over 102 seconds without any observable degradation in the resistive switching states. In addition to this, the charge–magnetic flux curve was observed to be a single-valued function at a higher magnitude of the flux and became double valued at a lower magnitude of the flux. The conduction mechanism of the ZnO thin film memristive device followed the space charge limited current, and resistive switching was due to the filamentary resistive switching effect.

Selective interaction between phytomediated anionic silver nanoparticles and mercury leading to amalgam formation enables highly sensitive, colorimetric and memristor-based detection of mercury

“…Considered as a fourth fundamental circuit element along with resistor, capacitor, and an inductor 32 , the memristive devices are better known for their memory with resistance property. The memristive devices basically depend on two important recognition criteria such as hysteresis loop in I-V plane and frequency-dependent I-V hysteresis loop or limiting linear characteristic [33][34][35] . As per the theory of limiting linear characteristics, the I-V hysteresis loop shrinks as the frequency of applied signal increases.…”

Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory

“…Therefore, the devices exhibited an ohmic transport mechanism at the LRS, as shown in step 4 in Figure 11 . When applying a negative bias to the top Ag electrode, the Ag filaments were oxidized into Ag + ions and then reduced at the Ag electrode, leading to the rupture of the filament conduction path corresponding to the switching of these devices from a LRS to a HRS [ 33 ], as depicted the step 5 in Figure 11 .…”

Endurance degradation of solution-processed ZnO polycrystalline film-based resistive switching memory

“…ZnO是一种常见的二元过渡金属氧化物半导体材 料 [14] , 具有优异的光学和电学性能, 不仅广泛应用于 半导体薄膜晶体管 [15] 、发光二极管 [16] 、光催化 [17] 和钙 钛矿太阳能电池 [18,19] 等多个研究领域, 而且在RRAM领 域也颇具应用潜力 [20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35] . 制备ZnO薄膜常见方法主要有 磁控溅射法(Magnetron Sputtering) [20][21][22][23][24][25] 、原子层沉积法 (ALD) [26][27][28] 、脉冲激光沉积法(PLD) [29][30][31] 以及溶液法 (Solution Method) [32][33][34][35]…”