“…Antimony trisulfide (Sb 2 S 3 ) possesses a broad spectral absorption range, a high absorption coefficient, a good solution processability and stability, which enable it to be a promising light absorber for photovoltaic applications. , The state-of-the-art Sb 2 S 3 solar cell has achieved the new power conversion efficiency (η) record of 8% in planar heterojunction devices after η = 7.5% in Sb 2 S 3 -sensitized mesoporous devices, but still lags far behind the Shockley–Queisser limit of η = 28.64% for single-junction Sb 2 S 3 solar cell with a typical band gap of 1.70 eV . Essentially, the performance of Sb 2 S 3 solar cells strongly depends on the preferred orientation of Sb 2 S 3 film due to one-dimensional crystalline structure with highly anisotropic properties in Sb 2 S 3 crystals. , It is desired to prepare Sb 2 S 3 thin films with a preferred crystallographic orientation along the [ hk 1] direction, typically [211] or [221], for the efficient solar cells with the (Sb 4 S 6 ) n ribbons almost parallel to substrate normal. − Moreover, solution-processed Sb 2 S 3 films always have impurity phases (e.g., Sb 2 O 3 , SbOCl, and Sb(OH) 3 ) and surface defects (e.g., sulfur vacancy (V S ), Sb S antisite) to deteriorate the solar cell performance. , Many efforts have been attempted to improve the performance of Sb 2 S 3 solar cells, such as composition control, , orientation regulation, , and interfacial engineering. , Among those strategies, interfacial engineering is a more effective approach to suppress the interfacial carrier recombination for the devices with a greatly enhanced charge collection efficiency . For instance, Lee et al inserted a Ni-4 mercaptophenol layer between Sb 2 S 3 and hole-transporting material (HTM) layers and improved the η from 2.07 to 2.79% by increasing the extraction efficiency of photogenerated holes.…”