Solution-processed high-k thin films as a resistive switching for ReRAM applications

Jang, Ki-Hyun; Oh, Se-Man; An, Hongyu; Cho, Won-Ju

doi:10.1016/j.cap.2013.12.019

Cited by 17 publications

(2 citation statements)

References 25 publications

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“…[18][19][20] Furthermore, it is possible to achieve that the minimizing of the dispersion of resistive switching parameter by using the sol-gel method. 20,21) As a result, in the rectification mode on sol-gel processed TiO x device, the forward current density over 10 2 A=cm 2 , an ideality factor of 1.32, and a high on=off ratio (>10 4 ) were achieved. In addition, stable bipolar resistive switching characteristics with narrow distributions of resistive switching parameters were obtained in the resistive switching mode.…”

Section: Introductionmentioning

confidence: 92%

Rectifying characteristics and bipolar resistance switching behaviors in sol–gel processed TiO_x thin film

Kim¹,

Nam²,

Cho³

et al. 2015

Jpn. J. Appl. Phys.

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We demonstrate a sol-gel processed Ti/TiO x /Pt device for rectifying characteristics as well as resistive switching. In the rectification mode, Ti/ TiO x /Pt device exhibited a forward current density (>10 2 A/cm 2 ) and on/off ratio (>10 4 ) owing to asymmetric Schottky barrier at the Ti/TiO x (0.11 eV) and TiO x /Pt (0.57 eV). After the forming process by applying the positive bias, the rectification mode of sol-gel TiO x device changed to the resistive switching mode. In the case of resistive switching mode, when applying the negative bias, the high resistance state (HRS) is dominated by Schottky emission in low voltage and by Poole-Frenkel emission in high voltage. Contrary to applying the negative bias, the HRS exhibited the Schottky emission in the whole positive bias. Different type of switching mechanisms might be attributed to the oxygen vacancy distribution across the TiO x active layer.

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Section: Introductionmentioning

confidence: 92%

Rectifying characteristics and bipolar resistance switching behaviors in sol–gel processed TiO_x thin film

Kim¹,

Nam²,

Cho³

et al. 2015

Jpn. J. Appl. Phys.

Self Cite

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“…As the above graph shows linearity in the high-voltage region, the P-F emission model expressed as a conduction mechanism is suitable [33].…”

Section: Resultsmentioning

confidence: 99%

Structural phase transition and resistive switching properties of Cu_xO films during post-thermal annealing

Seo,

Kim,

Kim

et al. 2024

Nanotechnology

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We studied the phase change and resistive switching characteristics of copper oxide (CuxO) films through post-thermal annealing. This investigation aimed to assess the material's potential for a variety of electrical devices, exploring its versatility in electronic applications. The CuxO films deposited by RF magnetron sputtering were annealed at 300, 500, and 700 °C in ambient air for 4 min by rapid thermal annealing (RTA) method, and then it was confirmed that the structural phase change from Cu2O to CuO occurred with increasing annealing temperature. Resistive random-access memory (ReRAM) devices with Au/CuxO/p+-Si structures were fabricated, and the ReRAM properties appeared in CuO-based devices, while Cu2O ReRAM devices did not exhibit resistive switching behavior. The CuO ReRAM device annealed at 500 °C showed the best properties, with a resistive window of 8 × 102, good switching endurance of ~100 cycles, data retention for 104 s, and stable uniformity in the cumulative probability distribution. This characteristic change could be explained by the difference in the grain size and density of defects between the Cu2O and CuO films. These results demonstrate that superior and stable resistive switching properties of RF-sputtered CuxO films can be obtained by low-temperature RTA.

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High‐κ Dielectric Oxides for Electronics

Zhang

Yang

et al. 2021

Oxide Electronics

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Solution-processed high-k thin films as a resistive switching for ReRAM applications

Cited by 17 publications

References 25 publications

Rectifying characteristics and bipolar resistance switching behaviors in sol–gel processed TiO_x thin film

Rectifying characteristics and bipolar resistance switching behaviors in sol–gel processed TiO_x thin film

Structural phase transition and resistive switching properties of Cu_xO films during post-thermal annealing

High‐κ Dielectric Oxides for Electronics

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Solution-processed high-k thin films as a resistive switching for ReRAM applications

Cited by 17 publications

References 25 publications

Rectifying characteristics and bipolar resistance switching behaviors in sol–gel processed TiOx thin film

Rectifying characteristics and bipolar resistance switching behaviors in sol–gel processed TiOx thin film

Structural phase transition and resistive switching properties of Cu x O films during post-thermal annealing

High‐κ Dielectric Oxides for Electronics

Contact Info

Product

Resources

About

Rectifying characteristics and bipolar resistance switching behaviors in sol–gel processed TiO_x thin film

Rectifying characteristics and bipolar resistance switching behaviors in sol–gel processed TiO_x thin film

Structural phase transition and resistive switching properties of Cu_xO films during post-thermal annealing