Solution‐Processed Hydrogen‐Bonded Organic Framework Nanofilms for High‐Performance Resistive Memory Devices

Abstract

The integration of hydrogen‐bonded organic frameworks (HOFs) into electronic devices holds great promise due to their high crystallinity, intrinsic porosity, and easy regeneration. However, despite their potential, the utilization of HOFs in electronic devices remains largely unexplored, primarily due to the challenges associated with fabricating high‐quality films. Herein, we achieved controlled synthesis of HOFs nanofilms with smooth surface, good crystallinity, and high orientation using a solution‐processed approach. The memristors exhibit outstanding bipolar switching performance with low set voltage of 0.86 V, excellent retention of 1.64 × 104 s, and operational endurance of 60 cycles. Additionally, these robust memristors displayed remarkable thermal stability, maintaining their performance even at elevated temperatures of up to 200°C. More strikingly, scratched HOFs films can be readily regenerated through a simple solvent rinsing process, enabling their reuse for the fabrication of new memristors, which is difficult to achieve with traditional resistive switching materials. Additionally, our investigations utilizing conductive atomic force microscopy and scanning transmission electron microscopy reveal a switching mechanism based on the reversible formation and annihilation of conductive filaments. This work provides novel and invaluable insights that have a significant impact on advancing the widespread adoption of HOFs as active layers in electronic devices.This article is protected by copyright. All rights reserved

Molecular-Potential and Redox Coregulated Cathodic Electrosynthesis toward Ionic Azulene-Based Thin Films for Organic Memristors

“…In order to analyze the device-to-device variation and reproducibility, the distribution of set/reset voltage and HRS/LRS currents in 10 × 10 memristor array is shown in Figure S15. It suggested the reliability and repeatability of our artificial memristor equivalent to other reported organic/inorganic memristors. − For the Al/PbiAz/ITO device, the negative bias of −0.85 V switched the device from the OFF state to the ON state. Subsequently, the positive bias of 2.7 V reset operations and achieved the ON/OFF current ratio of approximately 44 (Figure S16a).…”

Supramolecular polynuclear clusters sustained cubic hydrogen bonded frameworks with octahedral cages for reversible photochromism

“…The thermal and solvent stability of crystals indicated that SSBUs built by charged-assisted 70 supramolecular clusters stabilized TCA_NH 4 and avoided further phase change 71 and collapse of the framework. Taking advantage of the solution-processible benefit of HOFs 72 , the encapsulated trihalomethane could be decapsulated by mild hydrolysis of hydrogen-bonded networks. After heating and dissolving in dimethyl sulfoxide (DMSO), nuclear magnetic resonance (NMR) results revealed that the encapsulated TCA_NH 4 @CHCl 3 , TCA_NH 4 @CHBr 3 , and TCA_NH 4 @CHI 3 were observed to decompose and trihalomethane were observed to release (Fig.…”

Implementation of Thermal-Triggered Binary–Ternary Switchable Memory Performance in Zn/polysulfide/organic Complex-Based Memorizers by Finely Modulating the S62– Relaxation

“…The ON/OFF ratio can be calculated as 1.96 × 10 2 using −0.1 V as the reading voltage. The relatively low voltage can avoid device failure, which was commonly adopted in memory devices. ,, The uniform HRS/LRS currents and V set / V reset distributions with 10 sweeping cycles hint that its binary resistive switching behavior is repeatable (Figure S7b,c). The device endurance could be further verified by 100 continuous cycles (Figure S7d).…”