“…The use of organic field-effect transistors (OFETs) as photosensors has become more and more popular since the early examples proposed by Narayan et al and Saragi et al The phototransistor performance is commonly quantified by the photosensitivity ( P = ( I light – I dark )/ I dark ) and photoresponsivity ( R = ( I light – I dark )/ P opt ), where I light and I dark are the drain current values under illumination and in the dark respectively, while P opt is the power of incident light. , During the last years, the OPT performance has continuously improved, triggered by the design of novel OSCs, − device architectures, ,,,− and interface engineering. ,,, For instance, Ji et al demonstrated a high-performance OPT based on a 2,6-diphenylanthracene (DPA) thin film, exhibiting high mobility (∼7.5 cm 2 V –1 s –1 ) and remarkable optical performance parameters ( P = 8.5 × 10 7 and R = 1.34 × 10 5 A W –1 ) that are comparable and even superior to that of inorganic counterparts . The reported phototransistors relied on the highly crystalline nature of the DPA thin film obtained by vacuum deposition.…”