Solution processed white light photodetector based N, N′-di (2-ethylhexyl)-3,4,9,10-perylene diimide thin film phototransistor

Abstract

In this study, a solution-processed n-type photo-sensing organic thin film transistor was investigated using polymeric\ud dielectric under different white light illuminations. N, N′-di (2-ethylhexyl)-3,4,9,10-perylene diimide and\ud divinyl tetramethyl disiloxane-bis (benzo-cyclobutene) were used as a soluble active organic semiconductor and\ud as a dielectric material, respectively. Stable amplification was observed in the visible region without gate bias by\ud the device. The electrical characterization results showed that an n-type phototransistor with a saturated electron\ud mobility of 0.6 × 10−3 cm2/V·s and a threshold voltage of 1.8 V was obtained. The charge carrier density of the\ud channel of the device exhibited photo-induced behaviors that strongly affected the electrical properties of the transistor.\ud The photosensitivity and photoresponsivity values of the device were 63.82 and 24 mA/W, respectively.\ud These findings indicate that perylene diimide is a promising material for use on organic based phototransistor

High-Performance Phototransistors Based on PDIF-CN2 Solution-Processed Single Fiber and Multifiber Assembly

“…Among organic semiconducting molecules used as active components in efficient phototransistors, perylene di-imide (PDI) derivatives are particularly suitable because of their characteristic absorption in the visible region combined with the capacity to transport electrons. [42][43][44][45][46][47][48][49][50][51][52][53] One of the major limitations of organic transistors, especially those based on n-type systems, is their air sensitivity. To overcome such a limitation, we have focused our attention on air-stable n-type perylene di-imide derivative, i.e.…”

Compact modeling of the effects of illumination on the contact region of organic phototransistors

“…Our model for OTFTs under illumination is now tested with two sets of experimental data from different OPTs [17,56]. Output and transfer characteristics were measured at different light intensities in both sets of transistors.…”

“…It is remarkable how model (10), which initially was proposed as a link between the variation of the threshold voltage of the HEMT and the barrier lowering at the source region, has been applied successfully to their organic counterparts [12,13,16,17,47,48,56,57]. If such an important connection exists between the variation of the threshold voltage of the device and a possible barrier lowering at the contact region, then the transistor models should include the dependence of the contact region with illumination.…”

“…A second test of our model is done with [N,N'-di(2ethylhexyl)-3,4,9,10-perylene diimide] (EHPDI) based OPTs [56] with a top contact/bottom gate geometry and BCB as gate insulator with a capacitance per unit area C ox = 1.73 nF/cm 2 . The output and transfer characteristics, measured by the authors under dark and at 70, 79.2 and 91.06 mW/cm 2 white light intensities [56], are represented with crosses in Fig. 5 (top side) and Fig.…”

“…The full protocols of the substrate cleaning, and surface passivation were given in Ref. [56]. The electrical characterization of the fabricated device was conducted in an inert gas atmosphere inside a glove box.…”