2020
DOI: 10.1021/acs.chemmater.9b03807
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Solvent-Free Powder Synthesis and MOF-CVD Thin Films of the Large-Pore Metal–Organic Framework MAF-6

Abstract: A simple solvent-and catalyst-free method is presented for the synthesis of the large-pore metal−organic framework (MOF) MAF-6 (RHO-Zn(eIm) 2) based on the reaction of ZnO with 2-ethylimidazole vapor at temperatures ≤100°C. By translating this method to a chemical vapor deposition (CVD) protocol, crystalline films of a large-pore material could be deposited for the first time entirely from the vapor phase. A combination of positron annihilation lifetime spectroscopy (PALS) and Kr physisorption measurements con… Show more

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Cited by 80 publications
(80 citation statements)
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“…[36] Additionally,t his approach could be extended to (and used to compare) other synthesis techniques, [4] like one-pot solvothermal self-assembly, [8] spincoating, [11,37] and the emerging chemical vapor or atomic layer deposition methods. [38][39][40][41]…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…[36] Additionally,t his approach could be extended to (and used to compare) other synthesis techniques, [4] like one-pot solvothermal self-assembly, [8] spincoating, [11,37] and the emerging chemical vapor or atomic layer deposition methods. [38][39][40][41]…”
Section: Resultsmentioning
confidence: 99%
“…This creates opportunities to study SURMOF (thin) films in many processes for which a spectroscopic toolbox can be utilized, like catalytic conversions, probe molecule adsorption, or sensor‐related studies, like for example, the behavior of HKUST‐1 as water detector . Additionally, this approach could be extended to (and used to compare) other synthesis techniques, like one‐pot solvothermal self‐assembly, spin‐coating, and the emerging chemical vapor or atomic layer deposition methods …”
Section: Resultsmentioning
confidence: 99%
“…Also, some problems regarding the homogeneity and continuity of the films over large areas have been noticed. 67 For instance, when very thin films (o10 nm) were left to react completely, fast crystal ripening occurred before the ZnO was completely consumed and the continuity of the films was disturbed. As pointed out by Stassin et al, the need for controlling independently the temperature of the substrate and the reaction chamber walls to obtain a desired morphology remains a challenge.…”
Section: View Article Onlinementioning
confidence: 99%
“…As pointed out by Stassin et al, the need for controlling independently the temperature of the substrate and the reaction chamber walls to obtain a desired morphology remains a challenge. 67 Still, the MOF-CVD approach has recently allowed the introduction of MOF thin films as ultra-low k dielectric materials for advanced chip interconnects. As demonstrated by Krishtab et al, 46 ZIF-8 and ZIF-67 (CoO x and 2-methylimidazole) were deposited to fill the narrow gaps between the metallic trenches of a chip.…”
Section: View Article Onlinementioning
confidence: 99%
“…The MAF-6 has bigger pores than ZIF-8, which is applicable for adsorbing large molecules. [40] There also have been trials of preparing the initial metal oxide layers in various ways, such as ZnO layers grown by CVD for the growth of MOF-5 type thin films [41] and CuO layers grown by PVD for the growth of various Cu-based MOF thin films. [42] Ma et al [38] also applied an analogous ZIF-8 growth method to the growth of ZIF-8 membranes by transforming ZnO layers that had been deposited on permeable Al 2 O 3 substrates, which is schematically described in Figure 3a.…”
Section: Cvd-based Gas-phase Mof Thin Film Growthmentioning
confidence: 99%