Guided molecular assemblies of a series of linear diacetylenic acids (C 12 -C�C-C�C-C n -COOH, with n = 7−11) were prepared on silicon substrates by a solution-shearing method. Upon UV irradiation, well-aligned poly(ene-yne) conjugate backbones along the shearing direction were successfully obtained for all acids used. However, different morphologies were observed, depending on the chain length of the spacer group C n between the diacetylene unit and the carboxyl group. An odd−even effect in the morphology was observed in that smooth, continuous yet striped morphology was observed with C n of odd carbon number (n = 7, 9, and 11), whereas with C n of even carbon number (n = 8 and 10), a patchy and noncontinuous morphology was observed. This is in distinct contrast with the odd−even effect for thermally evaporated films previously observed: a ring-type morphology for acids with C n of odd carbon number and a dendrite-like morphology for acids with C n of even carbon number. The structures of the films before and after polymerization were characterized by tools including polarized optical microscopy, UV spectroscopy, and grazing incidence X-ray diffraction. The "odd−even effect" in morphology was also discovered in other characteristics and properties such as film orderliness, roughness, and etc. as a result of different crystal packing motifs of C 12 -C�C-C�C-C n -COOH in the sheared films. Thin-film transistors based on these films were fabricated, with the average mobility ranging between 0.37 and 2.51 cm 2 /Vs, and the highest mobility of 3.32 cm 2 /Vs was achieved for the device based on the acid with n = 9.