Optical Microlithography XVIII 2005
DOI: 10.1117/12.600312
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Some aspects on mechanisms responsible for contamination of optical components in DUV lithographic exposure tools

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Cited by 8 publications
(5 citation statements)
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“…Fosshaug et al [5] provides a detailed description of the multiple laser interactions occurring to initiate LIC. First, covering the interaction between the UV laser-light and the glass surface by pointing to experiments [6] showing that light-induced "prenucleation" occurs by photolysis of a molecular adlayer, forming radicals at the surface.…”
Section: Lic Initiation and Developmentmentioning
confidence: 99%
“…Fosshaug et al [5] provides a detailed description of the multiple laser interactions occurring to initiate LIC. First, covering the interaction between the UV laser-light and the glass surface by pointing to experiments [6] showing that light-induced "prenucleation" occurs by photolysis of a molecular adlayer, forming radicals at the surface.…”
Section: Lic Initiation and Developmentmentioning
confidence: 99%
“…Because airborne molecular contamination during the lithographic process is the biggest problem causing lens contamination, 2 the sensitivity of the lithographic process to airborne molecular contamination is recognized as one of the most challenging issues affecting the next generation of submicron geometries 3 6 …”
Section: Introductionmentioning
confidence: 99%
“…Because airborne molecular contamination during the lithographic process is the biggest problem causing lens contamination, 2 the sensitivity of the lithographic process to airborne molecular contamination is recognized as one of the most challenging issues affecting the next generation of submicron geometries. [3][4][5][6] During the early 2000s, an argon fluoride light source with a short wavelength of 193 nm and a high energy of 148 kcal∕mol was developed. 7 However, as the power of the light source was increased, more types of contaminants were activated.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore AMC limits within such lithography devices and its controlled environments have continuously been tightened. [11][12][13] The trend of AMC limits can easily been followed in the ITRS roadmap (International Technology Roadmap for Semiconductors).…”
Section: Introductionmentioning
confidence: 99%