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For many years, laser patter generation has been printing on i-line resists. As features sizes continue to shrink, laser pattern generation is moving to DUV laser wavelengths, and a production worthy resist process is needed. Characteristics such as standing waves, resist foot and CD drift during and after the exposure have previously challenged efforts to migrate to 248nm stepper chemically amplified resists (CARs) to mask making applications. In this study the performance of a commercially available 248nm laser/e-beam resist solution is examined on the Sigma7000 series laser patter generators.To achieve virtually no resists foot as well as tight CD control, the optimum process conditions for optical laser applications were sought. Cross-sectional and top-down scanning electron microscopy was performed to evaluate the resist and dry etch processes. A comparison is made with the resist DX1100P, used in initial stages for DUV laser pattern generators development. The new resist also benefit from being well established in mask making with e-beam mask writers.

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