Some Device Applications of Spreading Resistance Measurements on Epitaxial Silicon

Abstract

Thin epitaxial silicon should not be characterized by simply specifying a thickness and resistivity. The success of a device can depend on knowledge of the entire epitaxial impurity profile. In most cases the complete profile can only be obtained by the spreading resistance technique. The information obtained by this method should then be correlated with the results of the more commonly used characterization techniques; infrared thickness measurement and diode capacitance-voltage profiling. Examples of such correlations are presented for a number of thin epitaxial device structures such as GIMIC, OXIM, a 50 GHz IMPATT diode, a PIN phase modulator, and a large area power Schottky diode.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 165.193.178.102 Downloaded on 2016-06-29 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 165.193.178.102 Downloaded on 2016-06-29 to IP

Radiation Effects Test Chip Guidelines

“…Review of the literature pro uced by the process. These profiles are also required for device physics simulation associated with this profiling procedure is highly of photoresponse, latchup, SEU waveforms, and advised [49][50][51].…”

WT4 Millimeter Waveguide System: Semiconductor Devices for the WT4 Repeater

“…The most important parameter in the epitaxial concentration profile is the effective thickness, t e n. This is the depth to which the active region is to be implanted and is measured by the spreading resistance (SR) technique. 5 After the dopant has been implanted and annealed, the slice is thinned, metallized, and separation-etched. Diodes are next bonded onto millimeter-wave bases and tailor-etched to the desired capacitance.…”

Semiconductor measurement technology

“…400-4, pp. 51-53) was continued with an experimental comparison of the step-relaxation method with the infrared reflectance method [24] and the spreading resistance method [25].…”

“…bond monitor, ultrasonic [37][38][39] boron redistribution 14 bulk resistivity [14][15][16][17] capacitance-voltage 10-14; 21-23 charge-coupled device [26][27] conductance-voltage method 22 25 flying-spot scanner [34][35][36] four-probe method (resistivity) [7][8][9] gold-doped silicon [18][19][20] Cray-Brown method 22 18-20; 21-25; 32-33 overlap diode model 45 oxide films [21][22][23][24][25] peripheral correction [10][11][12][13][14] photomask [28][29][30] photoresist [30][31] quadrupole mass analyzer [40][41][42] quasi-static method 23 radioisotope leak test 40 resistivity 7-9; 14-17 scanning electron microscopy 36 silica aquasol polish [7][8][9] sodium contamination 25 spreading resistance …”