An apparatus for measuring magnetic susceptibility by the Faraday method is described. It is capable of measuring susceptibilities ranging from 0.01×10−6 to 500×10−6 emu/g over a temperature range of 5 to 300 K, in fields up to 10 kOe, with a precision of 0.2% and an accuracy of 1%. Various problems associated with the measurements, such as thermomolecular flow, ferromagnetic impurities, and electrostatic forces, are discussed It is shown that problems arising from thermomolecular flow can be avoided by controlling the pressure of exchange gas. Correction for ferromagnetic impurities involves extrapolating the susceptibility vs 1/H to infinite field. Several methods for minimizing the problems caused by electrostatic force are discussed. The versatility of the balance is demonstrated by measurements made on NiTiO3 (χmax=229×10−6 emu/g) and K0.3 MoO3 (χ≈0.06×10−6 emu/g).

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Thin epitaxial silicon should not be characterized by simply specifying a thickness and resistivity. The success of a device can depend on knowledge of the entire epitaxial impurity profile. In most cases the complete profile can only be obtained by the spreading resistance technique. The information obtained by this method should then be correlated with the results of the more commonly used characterization techniques; infrared thickness measurement and diode capacitance-voltage profiling. Examples of such correlations are presented for a number of thin epitaxial device structures such as GIMIC, OXIM, a 50 GHz IMPATT diode, a PIN phase modulator, and a large area power Schottky diode.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 165.193.178.102 Downloaded on 2016-06-29 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 165.193.178.102 Downloaded on 2016-06-29 to IP

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