Some electric properties of PLZT ceramics

Estimation of intrinsic contribution to dielectric response of Pb0.92La0.08Zr0.52Ti0.48O3 thin films at low frequencies using high bias fields

“…3 Others have reported lower permittivity in ferroelectric thin films compared with bulk ceramics due to these effects. 3 We previously observed a very diffuse phase transition for PLZT (8/52/48) thin films on LNO/Ni and Pt/Si, 18 compared to bulk ceramics of similar composition reported by Gupta et al 30 and Wojcik et al 22 Third, we earlier observed a linear decrease, by $75%, in the remanent polarization in PLZT (8/52/48) films on LNO/Ni when the temperature approached the curie temperature, 18 which indicates a decrease in the lattice distortion, 26 and attributed the residual remanent polarization above the curie temperature to stress-induced ferroelectric order. 18 Fourth, PLZT compositions (especially La !…”

Dependence of the Microstructure and the Electrical Properties of Lanthanum‐Substituted (Na1/2Bi1/2)TiO3 on Cation Vacancies

“…[11][12][13][14][15][16][17][18] To compensate the positive charge of La A ⅐ , cation vacancies or electrons are formed during the incorporation process. [11][12][13][14][15][16][17][18] To compensate the positive charge of La A ⅐ , cation vacancies or electrons are formed during the incorporation process.…”

“…Previous reports on the incorporation of La ions into a perovskite structure revealed that the lanthanum ions incorporated exclusively at the A-sites because of their ionic radius. [11][12][13][14][15][16][17][18] To compensate the positive charge of La A ⅐ , cation vacancies or electrons are formed during the incorporation process. There are three possibilities for the defect structure of lanthanum-doped NBT ceramics:…”

“…Several reports on lanthaniadoped Pb(Zr,Ti)O 3 , [11][12][13][14] PbTiO 3 ,15,16 and BaTiO 3 17,18 suggested that vacancies were formed to compensate the excess charge of the trivalent lanthania. The compensation of the excess charge caused by the donors is determined by the concentration of dopants, the processing temperature, and the oxygen activity during the incorporation process.…”

“…The compensation of the excess charge caused by the donors is determined by the concentration of dopants, the processing temperature, and the oxygen activity during the incorporation process. Several reports on lanthaniadoped Pb(Zr,Ti)O 3 , [11][12][13][14] PbTiO 3 ,15,16 and BaTiO 3 17,18 suggested that vacancies were formed to compensate the excess charge of the trivalent lanthania. These vacancies played an important role in the grain growth and the densification process.…”