Some features of the blue luminescence in v-Si(1 - x)Ge(x)O2

Ginzburg, L. P.; Gordeev, A. A.; Gorchakov, A. P.; Jilinsky, A. P.

doi:10.1016/0022-3093(95)00217-0

Cited by 23 publications

(22 citation statements)

References 14 publications

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“…Excluding quantum size effects, we propose the twofold coordinated O-Ge-O (Ge 2 0 ) defect as a probable candidate for the luminescence. The calculated energies of 3.1 eV for this defect band [12] are in good agreement with our observed spectra. The crystallization process is associated with a cleaning and reconstructing process which causes the out-diffusion of the last traces of oxygen.…”

Section: Resultssupporting

confidence: 90%

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On the origin of blue light emission from Ge-nanocrystals containing a-SiOxfilms

Weigand

Zacharias

Bläsing

et al. 1998

Superlattices and Microstructures

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Section: Resultssupporting

confidence: 90%

“…On the other hand, defect states in the QD-matrix interfaces are discussed for their influence on the optical properties of these systems [2,12], as well as surface states [13]. Several defect mechanisms have been proposed to explain the absorption and luminescence spectra [14,15] independently of size effects.…”

Section: Introductionmentioning

confidence: 99%

On the origin of blue light emission from Ge-nanocrystals containing a-SiOxfilms

Weigand

Zacharias

Bläsing

et al. 1998

Superlattices and Microstructures

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“…The oxidation of Ge nanoislands surface is previously confirmed by the presence of GeO 2 in XRD pattern (Section 3.1.3) and oxygen peak in the EDX spectra, which is not shown here. Gallagher and Osterberg reported that the GeO 2 defects contain two nonbonding electrons [34,35]. Additionally, a ground-state singlet level (S0), an excited singlet level (S1), and a triplet level (T1) are formed in such defects.…”

Section: Ar Flow and Rf Powermentioning

confidence: 99%

Ge Nanoislands Grown by Radio Frequency Magnetron Sputtering: Comprehensive Investigation of Surface Morphology and Optical Properties

Samavati

Mustafa

Othaman

et al. 2015

Journal of Nanomaterials

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The comprehensive investigation of the effect of growth parameters on structural and optical properties of Si-based single layer Ge nanoislands grown via Stranski-Krastanov mechanism employing radio frequency magnetron sputtering due to its high deposition rate, easy procedure, economical cost, and safety is carried out. The estimated width and height of Ge nanoislands produced by this technique are in the range of ∼8 to ∼30 and ∼2 to 8 nm, respectively. Varieties parameters are manipulated to optimize the surface morphology and structural and optical behavior of Ge nanoislands. The resulted nanoislands are analyzed using various analytical techniques including atomic force microscope, X-ray diffraction, energy dispersive X-ray spectroscopy, room temperature photoluminescence, and Raman spectroscopy. The optimum parameters for growing high quality samples having high number density and homogenous and small size distribution are found to be 400 ∘ C for substrate temperature, 300 sec for deposition time, 10 sccm for Ar flow, and 100 W for radio frequency power. The excellent features of the results suggest that our systematic investigation on the organized growth factors and their effects on surface parameters and photoluminescence emission energy may constitute a basis for the tunable growth of Ge nanoislands (100) nanoislands suitable in nanophotonics.

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“…Suffering scattering from randomly distributed dipoles, the mobile electrons lose some energy ⌬ before recombination, where ⌬ depends on Ge concentration. From the formula E ϭ3.671Ϫ0.74(1Ϫx) 2 proposed by Ginzburg et al, 11 where Eϭ3.15 eV from the result of PL measurement, we can estimate the value of x in the oxygen-deficient amorphous Si(1Ϫx)Ge(x)O 2 film as x TH ϳ16%. Taking into account the error arising from the measurement of XPS, the theoretic data is fairly consistent to the experimental data 23%.…”

mentioning

confidence: 99%

“…2 should arise from the twofold-coordinated silicon O-Si-O (Si 2 0 ) or O-Ge-O (Ge 2 0 ). We can explain the mechanism of the photoluminescence from the oxidized Si 1ϪxϪy Ge x C y sample in terms of the dipole model 11 proposed by Ginzburg et al According to this model, we gave the energy level scheme of the Si 2 0 defects in the oxidized Si 1ϪxϪy Ge x C y thin films on Si͑100͒ substrates ͑see Fig. 4͒.…”

mentioning

confidence: 99%

Room-temperature blue luminescence of thermally oxidized Si1−x−yGexCy thin films on Si (100) substrates

Cheng

Zheng

Liu

et al. 1999

Applied Physics Letters

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We measured at room temperature the photoluminescence spectra of the thermally oxidized Si 1ϪxϪy Ge x C y thin films which were grown on silicon substrates by plasma-enhanced chemical vapor deposition and then wet oxidized at 1100°C for 20 min. The photoluminescence band with a peak at ϳ393 nm under the exciting radiation of ϭ241 nm was observed. Possible mechanism of this photoluminescence is discussed.

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Some features of the blue luminescence in v-Si(1 - x)Ge(x)O2

Cited by 23 publications

References 14 publications

On the origin of blue light emission from Ge-nanocrystals containing a-SiOxfilms

On the origin of blue light emission from Ge-nanocrystals containing a-SiOxfilms

Ge Nanoislands Grown by Radio Frequency Magnetron Sputtering: Comprehensive Investigation of Surface Morphology and Optical Properties

Room-temperature blue luminescence of thermally oxidized Si1−x−yGexCy thin films on Si (100) substrates

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