Some peculiarities of resist-profile simulation for positive-tone chemically amplified resists in electron-beam lithography

Abstract

Simulation of amine concentration dependence on line edge roughness after development in electron beam lithography J. Appl. Phys.Deep submicron resist profile simulation and characterization of electron beam lithography system for cell projection and direct writingIn the present work, we numerically modeled the processes of exposure and development of the CAMP6 chemically amplified resist during electron-beam lithography. The radial distributions of the absorbed electron energy in the resist for a zero-width ␦-function 30 keV electron beam are obtained by Monte Carlo simulation. These distributions ͑discrete data͒ are approximated by an analytical function ͑sum of double Gaussian and an exponential function͒. The values of the parameters of the function are calculated using an original Monte Carlo technique, and their dependencies on the resist thickness ͑d = 100, 200, 600, 1000, and 1500 nm͒ at two resist depths are presented. Using these parameters' values, we performed a computer simulation of the process of developing the resist taking into account its peculiarities due to the complicated mechanism of resist removal from soluble resist areas. We obtained profiles at various development times of a single 100 nm line.

Simulation of Fine Resist Profile Formation by Electron Beam Drawing and Development with Solubility Rate Based on Energy Deposition Distribution

“…The EID is defined by a combination of two Gaussian distributions that indicate the average exposure dosage per area. 4,17,18) However, the EID does not contain information about the energy deposition in the depth direction. The fundamental disadvantage of the nonlinear model is that the variation of the energy deposition along the depth direction is not considered.…”