Some physical properties of a Si-doped nano-crystalline GaAs thin film grown by thermionic vacuum arc

Şenay, Volkan; Özen, Soner; Pat, Şuat; Korkmaz, Şadan

doi:10.1016/j.vacuum.2015.05.030

Cited by 20 publications

(2 citation statements)

References 38 publications

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“…". Experiments with doping the GaAs semiconductor are presented in: [153] (Mo-doped GaAs on glass substrates), [154] (Sn-doped GaAs on glass substrates), [155] (Zn-doped GaAs on glass substrates), [156,157] (Si-doped GaAs on glass), [158] (C-doped GaAs on glass), [159] (B-doped GaAs on glass), [160] (In-doped GaAs on glass), [161] (Geand Mo-Ge-doped GaAs on glass), [162,163] (Co-doped GaAs on glass), [135] (Mg-doped GaAs on glass), [164] (Pb-doped GaAs on glass).…”

Section: Gallium-based Materialsmentioning

confidence: 99%

Thermionic Vacuum Arc—A Versatile Technology for Thin Film Deposition and Its Applications

et al. 2020

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This review summarizes the more-than-25-years of development of the so-called thermionic vacuum arc (TVA). TVA is an anodic arc discharge in vapors of the material to be deposited; the energy for its melting is delivered by means of a focused electron beam. The resulting material ions fall at the substrate where they form a well-adhesive layer; the ion energy is controllable. The deposited layers are, as a rule, free from droplets typical for cathodic arc deposition systems and the thermal stress of the substrates being coated is low. TVA is especially suitable for processing refractory metals, e.g., carbon or tungsten, however, in the course of time, various useful applications of this system originated. They include layers for fusion application, hard coatings, low-friction coatings, biomedical-applicable films, materials for optoelectronics, and for solid-state batteries. Apart from the diagnostic of the film properties, also the diagnostic of the TVA discharge itself as well as of the by TVA generated plasma was performed. The research and application of the TVA proceeds in broad international collaboration. At present, the TVA technology has found its firm place among the different procedures for thin film deposition.

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Section: Gallium-based Materialsmentioning

confidence: 99%

Thermionic Vacuum Arc—A Versatile Technology for Thin Film Deposition and Its Applications

et al. 2020

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“…In this research, InGaN thin films were prepared on amorphous glass substrates by the non‐reactive thermionic vacuum arc technique. Furthermore, this study presents a new deposition technique for GaN‐based solid‐state applications (Ekem et al ., ; Özen et al ., ; Pat et al ., ; Şenay et al ., ) by focusing the effect of the applied voltage between the anode and cathode on the morphological and optical properties of the InGaN thin films grown by thermionic vacuum arc. Transparent glass substrates were selected specifically for optical investigation of the produced films.…”

Section: Introductionmentioning

confidence: 99%

The influence of voltage applied between the electrodes on optical and morphological properties of the InGaN thin films grown by thermionic vacuum arc

et al. 2015

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Summary: The aim of this research is to investigate the optical and morphological properties of the InGaN thin films deposited onto amorphous glass substrates in two separate experiments with two different voltages applied between the electrodes, i.e. 500 and 600 V by means of the thermionic vacuum arc technique. This technique is original for thin film deposition and it enables thin film production in a very short period of time. The optical and morphological properties of the films were investigated by using field emission scanning electron microscope, atomic force microscope, spectroscopic ellipsometer, reflectometer, spectrophotometer, and optical tensiometer. Optical properties were also supported by empirical relations. The deposition rates were calculated as 3 and 3.3 nm/sec for 500 and 600 V, respectively. The increase in the voltage also increased the refractive index, grain size, root mean square roughness and surface free energy. According to the results of the wetting experiments, InGaN samples were low-wettable, also known as hydrophobic. SCANNING 38: 14-20, 2016.

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Characterization of a fast grown GaAs:Sn thin film by thermionic vacuum arc

Özen

Şenay

Pat

et al. 2015

J Mater Sci: Mater Electron

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Some physical properties of a Si-doped nano-crystalline GaAs thin film grown by thermionic vacuum arc

Cited by 20 publications

References 38 publications

Thermionic Vacuum Arc—A Versatile Technology for Thin Film Deposition and Its Applications

Thermionic Vacuum Arc—A Versatile Technology for Thin Film Deposition and Its Applications

The influence of voltage applied between the electrodes on optical and morphological properties of the InGaN thin films grown by thermionic vacuum arc

Characterization of a fast grown GaAs:Sn thin film by thermionic vacuum arc

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