(0,6,12, or 20 mol%)-doped In 2 O 3 (YInO; YIO) thin films were fabricated by the sol-gel spin-coating technique, and they were used as the active layer of thin-film transistor (TFT) devices. The YIO-TFTs operate in the n-channel enhancement mode and exhibit a well-defined pinch-off and saturation region. The Y 3þ (12 mol%)-doped In 2 O 3 TFT possesses the optimal performance, and its field-effect mobility in the saturated regime, threshold voltage, on-off ratio, and S factor are 0.95 cm 2 V À1 s À1 , 6.74 V, 1.55 Â 10 5 , and 2.37 V decade À1