Source-Field-Plated β-Ga2O3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2

A 800 V β‐Ga2O3 Metal–Oxide–Semiconductor Field‐Effect Transistor with High‐Power Figure of Merit of Over 86.3 MW cm−2

“…This illustrate that the carrier avalanche multiplication was first occurred in the channel, followed by the gate oxide breakdown. The performance of the device in this work (red pentagram) was benchmarked against some state‐of‐the‐art β‐Ga 2 O 3 MOSFETs (black squares) in the plot of R ON,sp versus V BR in Figure b . A high DC PFOM (defined as V BR 2 / R ON,sp ) of over 86.3 MW cm −2 was achieved in our β‐Ga 2 O 3 nanomembrane MOSFET.…”

“…Furthermore, Baliga's figure of merit (BFOM) of 3444 is also superior among some other popular wide‐bandgap semiconductors, such as SiC and GaN . These outstanding properties have led to tremendous research on β‐Ga 2 O 3 MOSFETs and Schottky barrier diodes, including enhancement‐mode recessed‐gate MOSFETs with an I DS of 40 mA mm −1 and a V BR of 505 V, a gate field‐plated MOSFET with a recorded V BR of 1850 V, a source field‐plated MOSFET with a high‐power figure of merit of 50.4 MW cm −2 , and high‐performance field‐plated Schottky barrier diodes with a V BR of over 3 kV and a direct current (DC) power FOM (PFOM) of 500 MW cm −2 …”

Enhancement‐Mode β‐Ga2O3 Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing

“…The β ‐Ga 2 O 3 epitaxial layer used in this work was grown by metal‐organic chemical vapor deposition (MOCVD). The details of β ‐Ga 2 O 3 growth can be referred to in the study by Lv et al The schematic cross section of Ga 2 O 3 MOSFETs is shown in Figure a. From bottom to top, the epitaxial layer consisted of a 600 nm unintentionally doped (UID) Ga 2 O 3 buffer layer and a 200 nm n‐type channel layer.…”

“…Although β ‐Ga 2 O 3 is a semiconductor with ultrawide bandgap, n‐type doping could be easily achieved with Si, Ge, or Sn acting as shallow donors . Depletion‐mode (D‐mode) β ‐Ga 2 O 3 metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) have been reported with high current density, high breakdown voltage, and high power figure of merit (PFOM) . However, due to the lack of effective p‐type doping, the high‐voltage enhancement‐mode (E‐mode) operation is comparatively difficult to be achieved.…”

Dispersion effects in on‐state resistance of lateral Ga 2 O 3 MOSFETs at 300 V switching

“…By taking into account the estimated dielectric breakdown strength of 8 MV/cm, the calculated BFM of 3214 is outperforming more established semiconductors such as SiC or GaN [2]. Current research activities using β-Ga 2 O 3 are preferentially focusing on the development of Schottky barrier diodes (SBD) [3][4][5] and metal oxide semiconductor field-effect transistors (MOSFETs) [6][7][8][9][10][11] which have already demonstrated the high potential for high voltage applications reaching a peak field strength as high as 5.1 MV/cm in SBDs [12] and an average breakdown strength of 3.8-3.9 MV/cm in MOSFETs [13,14]. However, investigations on the switching performance and the dynamic properties of such devices have been rarely reported up to now.…”