Source of miscorrelation of product level HBM to TLP test results

Prabhu, Manjunatha; Lee, Jian–Hsing; Natarajan, M.; Kumar, Vasantha; Jain, Rachna; Tsai, Tsung-Che; Li, Zhiqing; Thurmer, Dominic

doi:10.1109/eosesd.2015.7314743

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Source of miscorrelation of product level HBM to TLP test results

Cited by 4 publications

References 10 publications

Enhanced ESD-Capability of High-Voltage 32 V N-Channel LDMOSs with the Body-Side Hetero-Junction Structure

Enhanced ESD-Capability of High-Voltage 32 V N-Channel LDMOSs with the Body-Side Hetero-Junction Structure

A novel BG-triggered ggNMOS structure for FD-SOI ESD protection

ESD Induced Irreversible Degradation Processes in the Semiconductor Devices

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