Source-side injection single-polysilicon split-gate flash memory

Yamauchi, Y.; Kamakura, Yoshinari; Matsuoka, Toshimasa; Ueda, Naoki

doi:10.7567/jjap.53.034201

Cited by 2 publications

(2 citation statements)

References 40 publications

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“…In the SSI mechanism both the hor nents are involved. In previous technol were described, respectively, as [25]: In the SSI mechanism both the horizontal (E H ) and vertical (E V ) electric field components are involved. In previous technology nodes, E H and E V during program operation were described, respectively, as [25]:…”

Section: Electrode Programmentioning

confidence: 99%

Influence of Common Source and Word Line Electrodes on Program Operation in SuperFlash Memory

Mazzetta

Irrera

2021

Electronics

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A theoretical study of the influence of word line and common source electrodes on the program operation in shrank SuperFlash memory is proposed. Numerical simulations demonstrate that the literature model defined for previous nodes is not always suitable, due to the continuous cell physical size reduction and to the consequent increment of capacitive coupling between the floating gate and adjacent electrodes. To get a deeper insight, an analytical model of the electric field in the region of source side injection is proposed. This model describes the impact of the cell physical and electrical parameters on the vertical and horizontal field components and highlights the strong dependence of the carrier injection on the technology node. Furthermore, the numerical and analytical models estimate the influence of the word line and common source electrodes on the time-to-program, the floating gate potential and the source side injection efficiency, taking into consideration, at the same time, their possible impact on the cell reliability.

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Section: Electrode Programmentioning

confidence: 99%

Influence of Common Source and Word Line Electrodes on Program Operation in SuperFlash Memory

Mazzetta

Irrera

2021

Electronics

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“…This is primarily because of the increase in the cell size. [6,14] In contrast to NOR, NAND flash builds cells in series with adjacent cells that share the source and drain. This specific structure waives the requirement for an extra metal line and thus significantly reduces the cell size, enabling the NAND memory to have a much smaller cell size and lower die cost than the NOR memory.…”

Section: Flash Memorymentioning

confidence: 99%

Physical principles and current status of emerging non-volatile solid state memories

Wang

Yang

Wen

2015

Electron. Mater. Lett.

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Today the influence of non-volatile solid-state memories on persons' lives has become more prominent because of their non-volatility, low data latency, and high robustness. As a pioneering technology that is representative of non-volatile solidstate memories, flash memory has recently seen widespread application in many areas ranging from electronic appliances, such as cell phones and digital cameras, to external storage devices such as universal serial bus (USB) memory. Moreover, owing to its large storage capacity, it is expected that in the near future, flash memory will replace hard-disk drives as a dominant technology in the mass storage market, especially because of recently emerging solid-state drives. However, the rapid growth of the global digital data has led to the need for flash memories to have larger storage capacity, thus requiring a further downscaling of the cell size. Such a miniaturization is expected to be extremely difficult because of the well-known scaling limit of flash memories. It is therefore necessary to either explore innovative technologies that can extend the areal density of flash memories beyond the scaling limits, or to vigorously develop alternative non-volatile solid-state memories including ferroelectric random-access memory, magnetoresistive random-access memory, phase-change random-access memory, and resistive random-access memory. In this paper, we review the physical principles of flash memories and their technical challenges that affect our ability to enhance the storage capacity. We then present a detailed discussion of novel technologies that can extend the storage density of flash memories beyond the commonly accepted limits. In each case, we subsequently discuss the physical principles of these new types of non-volatile solid-state memories as well as their respective merits and weakness when utilized for data storage applications. Finally, we predict the future prospects for the aforementioned solid-state memories for the next generation of data-storage devices based on a comparison of their performance.

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Source-side injection single-polysilicon split-gate flash memory

Cited by 2 publications

References 40 publications

Influence of Common Source and Word Line Electrodes on Program Operation in SuperFlash Memory

Influence of Common Source and Word Line Electrodes on Program Operation in SuperFlash Memory

Physical principles and current status of emerging non-volatile solid state memories

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