Space arrangement of Ge nanoislands formed by growth of Ge on pit-patterned Si substrates

Nucleation and epitaxial growth of Ge nanoislands on Si surface prepatterned by ion irradiation

“…Additionally, we carried out molecular dynamics (MD) studies of Ge surface diffusion on groove‐patterned Si surface with 2 monolayer thick Ge wetting layer. The procedure is described elsewhere . The MD calculations showed that surface activation energy at the sidewalls is 1.15 ± 0.15 eV for inclination angles in the range from 10° to 30°.…”

Optimization tools of parallel simulation of nanostructures with quantum dots

“…Experimental studies of CP optimization in the simulation programs of heteroepitaxial growth of quantum dots [1,2] developed in the Institute of Semiconductor Physics, SB RAS have shown that the pattern of memory usage in these programs allows for delta compression relative to the first CP (b = {b i = 1, i ∈ {1, . .…”

“…Significant results in this field can be obtained by mathematically simulating the heteroepitaxial growth of atoms on pit-patterned substrates. The solution to this problem involves processing of large amounts of information on the structure, properties, and state of the crystal lattice and its elements on high-performance distributed computing systems (CSs) [1,2].…”

Formation of germanium nanoislands on pit-patterned silicon substrates by means of the molecular dynamics method

“…Despite the extensive research of QD growth on pit-patterned substrates, there is a lack of knowledge about the mechanism of their formation and fundamental limitations on the size of the pits, contributing to the spatial ordering [3]. Using the molecular dynamics (MD) method, Novikov et al, [4] have revealed some features of the mechanism of surface atomic diffusion of Ge on pit-patterned Si substrates.…”