Space Charge Calculations for Semiconductors

Seiwatz, Ruth; Green, Mino

doi:10.1063/1.1723358

Cited by 210 publications

(65 citation statements)

References 12 publications

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“…The last assumption introduces errors of about 20%, see for example refs. [23,24]. Then it follows that the band bending is at least -340 mV (uncertainty about 10 mV), in good accordance with Margoninski et al 120,211.…”

Section: Resultssupporting

confidence: 75%

Surface states on clean Ge(001)2×1 surfaces

Zandvliet¹,

Silfhout²

1989

Surface Science Letters

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This paper describes a study concerning the interaction of oxygen with clean Ge(O01)2 x 1 surfaces in ultrahigh vacuum at 300 K. Surface conductance measurements, differential ellipsometry in the photon energy range of 1.5-4 eV and Auger electron spectroscopy have been used to monitor this solid-gas reaction. We observed in the joint density of states. as derived from ellipsometry.a peak at about 3.3 eV in addition to the optical transition at 1.8 eV reported earlier by Meyer. From the optical spectrum we show that the clean Ge(001) surface has at least three distinct surface states. Our results are essentially consistent with recent STM measurements and theoretical predictions. Moreover, we show that the distinct feature at 2.6 eV below the Fermi level as found with STM can be attributed to a surface state.

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Section: Resultssupporting

confidence: 75%

Surface states on clean Ge(001)2×1 surfaces

Zandvliet¹,

Silfhout²

1989

Surface Science Letters

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“…The surface is considered to be nondegenerate, no fast holes and fast electrons are assumed, AN is neglected, the sample is considered intrinsic, and #ps is replaced by the known value #p. The last assumption introduces errors of about 20%, see for example refs. [21,25]. Then it follows that the value is at least -280 mV (uncertainty about 10 mV), in good accordance with Boonstra et at.…”

supporting

confidence: 76%

Surface states on clean Ge(111) surfaces

Zandvliet

Silfhout

1988

Surface Science

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Surface states on Ge(lll)c(2x8) are detected using ellipsometry, fidd effect and surface conductivity measurements. Optical transitions at 1.7, 1.9, 2,3, and 3.0 eV are observed. Surface states in the gap are detected with DC field effect measurements. We found a relationship between the surface conductivity and the ellipsometric parameter ~k at the optical transitions during oxygen adsorption. A maximum in the surface conductivity is found for a coverage of 0.15 monolayer oxygen, at the same point Surnev detected (with work function measurements) a change of the elementary dipole moment.

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“…The charges induce electric fields at the surface that cause band bending. The electric field at the surface may be formally described by the solution of the Poisson equation for a dimensionless potential kT V e o ≡ ν [36,37]:…”

Section: Surface Charged Statesmentioning

confidence: 99%

Foundations of ab initio simulations of electric charges and fields at semiconductor surfaces within slab models

Krukowski

Kempisty

Strąk

2013

Journal of Applied Physics

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Semiconductor surfaces were divided into charge categories, i.e. surface acceptor, donor and neutral ones that are suitable for simulations of their properties within a slab model. The potential profiles, close to the charged surface states, accounting for explicit dependence of the point defects energy, were obtained. A termination charge slab model was formulated and analyzed proving that two control parameters of slab simulations exist: the slope and curvature of electric potential profiles which can be translated into a surface and volumetric charge density. The procedures of slab model parameter control 2 are described and presented using examples of the DFT simulations of GaN and SiC surfaces showing the potential profiles, linear or curved, depending on the band charge within the slab. It was also demonstrated that the field at the surface may affect some surface properties in a considerable degree proving that verification of this dependence is obligatory for a precise simulation of the properties of semiconductor surfaces.

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Space Charge Calculations for Semiconductors

Cited by 210 publications

References 12 publications

Surface states on clean Ge(001)2×1 surfaces

Surface states on clean Ge(001)2×1 surfaces

Surface states on clean Ge(111) surfaces

Foundations of ab initio simulations of electric charges and fields at semiconductor surfaces within slab models

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