Space-charge-induced negative resistance in avalanche diodes

Physical Limitations of Semiconductor Devices

“…[199] Numerical solution for multiple filaments has been obtained for the case of wide M-i-n + structure with length of contact n + -region L n = 9 μm (Ω = 2.55 μm). spontaneous multiple state formation is supported by the larger ratio of the length = 0.3 The results of Schottky diode M-i-n + structure simulation agree with earlier studies [203][204][205]. The positive differential conductivity is the result of the additional voltage drop across the extended n + -region.…”

Effect of Current Density on the Series Resistance of SDR (n+np+) Silicon IMPATT Diode in the X Band

“…The electric field profile of the present n np SDR Si diode at 100 C and at operating current density 3X54 Â 10 6 A m À2 , indicates that the diode is free from severe space charge effects although it is slightly punched through that decreases the series resistance of the diode. Table 1 shows that the theoretically calculated total breakdown voltage V B is nearly of experimental order [12]. The small variations of current density do not change the breakdown voltage appreciably and also the efficiency h [13] (as listed in Table 1).…”

Experimental evidence of broad-band negative resistance characteristics of TRAPATT devices

“…No satisfactory theoretical explanation has been found for these characteristics. Bower [4] has shown that, as a result of field distortion within the diode, suitably graded junctions can lead to a small-signal negative resistance, even down t o dc. However, extensive computations based on his work applied to the diodes used in these measurements have not indicated any negative resistance, although some depression in the spatial distribution of the field has been observed at 20 kA/cm2.…”