Space-charge polarisation dielectric behaviour of precursor derived monoclinic HfO2

Vendra, S.S. Lokesh; Antony, Noel; Koroleva, Ekaterina; Filimonov, A. V.; Vakhrushev, S. B.; Kumar, Ravi

doi:10.1016/j.ceramint.2022.01.182

Cited by 5 publications

(1 citation statement)

References 23 publications

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“…In addition, the performance of HfO 2 films is highly determined by the preparation methods. To obtain proper application, preparation of HfO 2 film has been investigated through several methods, including ion beam sputtering [ 15 ], magnetron sputtering [ 16 , 17 ], molecular beam epitaxy (MBE) [ 18 ], metal organic chemical vapor deposition (MOCVD) [ 19 , 20 ], pulsed laser deposition (PLD) [ 21 , 22 ] and atomic layer deposition (ALD). HfO 2 films obtained by MBE, MOCVD and PLD need to be prepared at a relatively high substrate temperature.…”

Section: Introductionmentioning

confidence: 99%

Crystallinity Effect on Electrical Properties of PEALD–HfO2 Thin Films Prepared by Different Substrate Temperatures

et al. 2022

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Hafnium oxide (HfO2) thin film has remarkable physical and chemical properties, which makes it useful for a variety of applications. In this work, HfO2 films were prepared on silicon through plasma enhanced atomic layer deposition (PEALD) at various substrate temperatures. The growth per cycle, structural, morphology and crystalline properties of HfO2 films were measured by spectroscopic ellipsometer, grazing-incidence X-ray diffraction (GIXRD), X-ray reflectivity (XRR), field-emission scanning electron microscopy, atomic force microscopy and x-ray photoelectron spectroscopy. The substrate temperature dependent electrical properties of PEALD–HfO2 films were obtained by capacitance–voltage and current–voltage measurements. GIXRD patterns and XRR investigations show that increasing the substrate temperature improved the crystallinity and density of HfO2 films. The crystallinity of HfO2 films has a major effect on electrical properties of the films. HfO2 thin film deposited at 300 °C possesses the highest dielectric constant and breakdown electric field.

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