Space-time dispersion of graphene conductivity

Abstract

We present an analytic calculation of the conductivity of pure graphene as a function of frequency ω, wave-vector k, and temperature for the range where the energies related to all these parameters are small in comparison with the band parameter γ = 3 eV. The simple asymptotic expressions are given in various limiting cases. For instance, the conductivity for kv0 ≪ T ≪ ω is equal to σ(ω, k) = e 2 /4h and independent of the band structure parameters γ and v0. Our results are also used to explain the known dependence of the graphite conductivity on temperature and pressure.

Signature of Schwinger's pair creation rate via radiation generated in graphene by strong electric current

“…It consists of considering the ballistic evolution of the current density in time after a sudden or gradual switching on of the electric …eld. The result within linear response is that the current settles very fast, on the microscopic time scale of t =~= ' 0:24 f s ( being the hopping energy), on the value of J = 2 E. The value is identical to the one obtained (at nonzero temperatures) for the AC conductivity [12]. The two contributions, polarization and attenuation are comparable in strength and combine to produce a constant total current.…”

Hybrid Surface-Phonon-Plasmon Polariton Modes in Graphene/Monolayer h-BN Heterostructures

“…The theoretical spectra were calculated by numerically solving classical electromagnetic equations using finite element method. 1,7 The background doping observed in our samples has been shown previously to be mainly caused by the FeCl etchant that is used to remove the copper foil from the as-grown CVD graphene, 7 although atmospheric impurities, and charge traps in the substrate can also play a role. 8,9 Interband transition measurements and E F fittings performed on bare graphene areas showed a similar gate vs. carrier density dependence to the patterned graphene areas, as was also observed in previous works.…”

“…The sheet conductivity of graphene σ(ω) is evaluated within the local phase approximation. 1 Here, the temperature ܶ is set as 300K. The carrier scattering rate Γ takes into account scattering by impurities with the carrier mobility of 500cm 2 /Vs, and by optical phonons estimated from theoretically obtained self-energy.…”

Plasmonics in atomically thin materials

“…For noble metals, we obtain these parameters by fitting the measured dielectric function of the material [106] to the expression (ω) = 1 − ω 2 bulk /ω(ω + iγ). For graphene, we use the local-RPA conductivity [36,107], which we correct in the following expression to simultaneously account for inelastic attenuation and finite temperature T in both intraband and interband transitions [45]:…”