Spatial characterization of interstitial oxygen and its related defects in Czochralski silicon wafers and ingots: A way to improve the material and device quality

Martel, Benoît; Veirman, Jordi; Cascant, M.; Enjalbert, N.; Tomassini, M.; Peyronnet, Rafaël; Stadler, Johannes; Fayard, E.; Dubois, Sébastien; Raymond, G.; Brun, Xavier F.; Bonnard, P.

doi:10.1109/pvsc.2015.7355686

Cited by 4 publications

(1 citation statement)

References 3 publications

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“…Although it is not harmful, it does can impact the overall performance of chips made by the silicon rods. A new technology called the OXYMAP technology can be used to monitor the oxygen concentration during the Cz process [3].…”

Section: Wafer Growthmentioning

confidence: 99%

IC Circuits—Soul of Modern Society

Han¹

2022

Advances in Social Science, Education and Humanities Research

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Almost every technology people used from last century till today contains components of Integrated circuits. In order to present the significance of chips, this article is going to go through the fabrication of chips-from chip design, wafer growth, wafer fabrication to package and testing. Moreover, a generalization of the chip categories will be discussed and an evaluation of the importance of chips will be presented in this paper as well.

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Section: Wafer Growthmentioning

confidence: 99%

IC Circuits—Soul of Modern Society

Han¹

2022

Advances in Social Science, Education and Humanities Research

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Ring Defects Associated with Boron–Oxygen‐Related Degradation in p‐Type Silicon Heterojunction Solar Cells

Vicari Stefani,

Kim,

Wright

et al. 2024

Adv Energy and Sustain Res

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Silicon heterojunction (SHJ) cell architectures, which have dominated silicon single‐junction efficiency records for the past 10 years, are processed at relatively low temperatures, on the order of ≈250 °C. Recombination‐active oxygen complexes in crystalline silicon, formed from interstitial oxygen (Oi), typically require temperatures higher than this to form. Therefore, it is typically assumed that SHJ cells are immune to such defects. This contrasts with the high‐temperature passivated emitter and rear cell (PERC) and tunneling oxide passivating contact (TOPCon) architectures, which can suffer from oxygen precipitates that are recombination active and difficult to predict. Herein, ring‐like defects are observed in boron‐doped p‐type SHJ solar cells, which leads to a degradation of open‐circuit voltage. It is shown that the spatial variation of this recombination activity is related to the boron–oxygen defect, the variation of which is likely due to the radial Oi distribution. Although boron‐doped p‐type wafers are no longer the industry standard, the defect engineering of wafers for SHJ production, using high‐temperature processing, is gaining significant interest. Such wafers can have an increased susceptibility to ring‐like defects. Therefore, spatially inhomogeneous defects causing recombination may become increasingly relevant for SHJ cells.

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