Spatial distribution of Cd in CdSe/ZnSe superlattices studied by X-ray diffraction

Kyutt, R. N.; Торопов, А. А.; Shubina, T. V.; Sorokin, S. V.; Ivanov, S. V.; Karlsteen, M.; Willander, Magnus

doi:10.1016/s0169-4332(00)00446-3

Cited by 8 publications

(3 citation statements)

References 10 publications

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“…Simulation of the RCs was performed according to an approximation in which kinematical scattering amplitude from the SL is added to that of dynamical diffraction from the substrate. The procedure was described elsewhere [15].…”

Section: Methodsmentioning

confidence: 99%

X-ray diffraction determination of the interface structure of CdSe/BeTe superlattices

Kyutt

Shubina

Sorokin

et al. 2003

J. Phys. D: Appl. Phys.

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Structural study of CdSe/BeTe superlattices (SLs) grown by molecular beam epitaxy on GaAs substrate was performed by using double and triple crystal x-ray diffractometry. The period of the studied structures was about 5 nm, while the thickness of thin CdSe insertions varied from 0.4 to 1.5 monolayer. It is shown that new Be–Se bonds arise at the BeTe–CdSe interfaces in addition to the Be–Se bonds expected at the CdSe–BeTe interfaces. From the analysis of the diffraction curves of 002-reflection the complex composition of interfaces and thin insertions has been determined and contribution of all types of bonds in each SL period calculated. The diffraction curves of 004-reflection were used for the specification of the fine structure of the interfaces.

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Section: Methodsmentioning

confidence: 99%

X-ray diffraction determination of the interface structure of CdSe/BeTe superlattices

Kyutt

Shubina

Sorokin

et al. 2003

J. Phys. D: Appl. Phys.

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“…Previous diffraction studies of interface grading and related interface interdiffusion consider superlattices grown in a number of different semiconductor materials systems including AlGaAs [26][27][28][29], InGaAsP [30], InGaAs [31,32], CdZnTe [33], and AlGaSb [34]. Investigations of the diffraction effects produced by lateral thickness variations in superlattices are less common, and include studies of AlGaAs [35], SiGe [36], and GaNAs [37], as well as purely theoretical treatments [38].…”

Section: Introductionmentioning

confidence: 99%

Effect of interface grading and lateral thickness variation on x-ray diffraction by InGaN/GaN multiple quantum wells

Lee

Koleske

Crawford

et al. 2012

Journal of Crystal Growth

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“…The model used is described in detail elsewhere. 9 In particular, the simulation of the SL XRD rocking curve in Fig. 1 yields an estimate of the average broadening of the layers along the growth direction, resulting e.g.…”

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confidence: 99%

GaAs in GaSb: a new type of heterostructure emitting at 2 µm wavelength

et al. 2002

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Spatial distribution of Cd in CdSe/ZnSe superlattices studied by X-ray diffraction

Cited by 8 publications

References 10 publications

X-ray diffraction determination of the interface structure of CdSe/BeTe superlattices

X-ray diffraction determination of the interface structure of CdSe/BeTe superlattices

Effect of interface grading and lateral thickness variation on x-ray diffraction by InGaN/GaN multiple quantum wells

GaAs in GaSb: a new type of heterostructure emitting at 2 µm wavelength

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