X-ray diffraction determination of the interface structure of CdSe/BeTe superlattices

Kyutt, R. N.; Shubina, T. V.; Sorokin, S. V.; Solnyshkov, D. D.; Ivanov, S. V.; Willander, Magnus

doi:10.1088/0022-3727/36/10a/334

Cited by 5 publications

(3 citation statements)

References 17 publications

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“…The CdSe/BeTe structures with the CdTe stressor interrupted at SSI maximum (type A) demonstrate typical ratio of CdTe to BeSe bond densities of ∼1/2 and noticeably asymmetric shape of the RCs, inherent for the structures with high residual stresses. More details have been published elsewhere [14].…”

Section: Resultsmentioning

confidence: 99%

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CdSe-based quantum dot nanostructures: MBE growth, properties and applications

Иванов

2004

Journal of Alloys and Compounds

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Section: Resultsmentioning

confidence: 99%

“…Structural properties of the CdSe/BeTe structures were studied by XRD [14] and TEM using a Philips EM-420 microscope at 100 kV. TEM cross-sectional images were taken using the (0 0 2) reflections chemically-sensitive for zinc blend cubic materials.…”

Section: Methodsmentioning

confidence: 99%

CdSe-based quantum dot nanostructures: MBE growth, properties and applications

Иванов

2004

Journal of Alloys and Compounds

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“…The CdSe/BeTe structures with the CdTe stressor interrupted at SSI maximum (type A) demonstrate typical ratio of CdTe to BeSe bond densities of ~1/2 and noticeably asymmetric shape of RCs, inherent for the structures with high residual stresses. More details have been published elsewhere [12].…”

Section: Resultsmentioning

confidence: 99%

CdSe‐based nanostructures: growth, properties, lasers

Иванов

Торопов

Shubina

et al. 2004

Physica Status Solidi (b)

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Paper presents an overview of recent results on novel CdSe quantum dot (QD) fabrication techniques with the main impact on a stressor-controlled self-organization process resulting in nucleation of real CdSe QDs optically active up to room temperature, with a narrower size distribution, a higher density and a high Cd content. The main idea of the stressor-controlled epitaxy is an intentional introduction of a superstrained fractional monolayer of the much higher lattice-mismatch compound -stressor -to create strong local stress fields on the growth surface which govern self-assembling of the main QD material. The studies are performed on a type-II non-common atom CdSe/BeTe system, where CdTe (∆a/a ~ +14%) and BeSe (∆a/a ~ -10%) interface bonds play a role of intrinsic stressors. Both experimental data (growth, structural and optical characterization) and Monte Carlo simulation of the growth process are presented.

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ZnSe interlayer effects on properties of (CdS∕ZnSe)∕BeTe superlattices grown by molecular beam epitaxy

Akimoto

Akita

et al. 2006

Journal of Applied Physics

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We study the dependence of structural properties on the thickness of the ZnSe interlayer (IL) in (CdS∕ZnSe)∕BeTe superlattices (SLs); this is crucial for improving the growth mode in this heterostructure. The in situ reflection of high-energy electron diffraction oscillation and high-resolution x-ray diffraction spectra show a perfect structure that is obtained by introducing a ZnSe IL between CdS and BeTe. An intersubband transition (ISB-T) down to 1.57μm with a full width at half maximum of 90meV has been observed in (CdS∕ZnSe)∕BeTe SLs. A strong ISB-T is observed when the ZnSe IL ⩾1 monolayer (ML); however, it completely disappears with the introduction of a 0.5 ML ZnSe IL in (CdS∕ZnSe)∕BeTe SLs. High-resolution transmission electron microscopy images reveal that a sharp interface is formed in the barrier and well transition region in the structure with ZnSe IL ⩾1 ML; however, the interfaces become rough and thick in those with a 0.5 ML ZnSe IL. This indicates that the properties of the interface in (CdS∕ZnSe)∕BeTe SLs play an important role in the performance of ISB absorption. A growth model is proposed to explain two-dimensional growth with the insertion of a ZnSe ML into the BeTe∕CdS heterostructure. Based on this growth model, the properties of the interface in this structure are explained.

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X-ray diffraction determination of the interface structure of CdSe/BeTe superlattices

Cited by 5 publications

References 17 publications

CdSe-based quantum dot nanostructures: MBE growth, properties and applications

CdSe-based quantum dot nanostructures: MBE growth, properties and applications

CdSe‐based nanostructures: growth, properties, lasers

ZnSe interlayer effects on properties of (CdS∕ZnSe)∕BeTe superlattices grown by molecular beam epitaxy

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