Spatial emission characteristics of EUV plasma sources

Mann, Klaus; Kranzusch, Sebastian; Peth, Christian; Schürmann, Max C.; Mißalla, T.

doi:10.1117/12.482748

Cited by 4 publications

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“…The collection efficiency of a source in an optical system is generally analysed by the solid angle. The solid angle is computed from the angular distribution of usable radiation [14]. This can be done by simple integration of EUV output over the acceptable solid angle of the collection system.…”

Section: Influence Of Di/dt and Pressure On The Collection Efficiencymentioning

confidence: 99%

A comparative study on the performance of a xenon capillaryZ-pinch EUV lithography light source using a pinhole camera

Song

Iwata

Homma

et al. 2006

Plasma Sources Sci. Technol.

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A pinhole camera has been employed to study the performance of a xenon capillary Z-pinch extreme ultraviolet (EUV) lithography light source driven by different dI/dt discharge current pulses. The performance of the EUV source in terms of dimension, intensity, collection efficiency and stability was specifically investigated by varying the experimental conditions such as the supplying gas pressure and dI/dt of the discharge current. Specific features, such as ring shape (annular profile) pinhole images and symmetrical and stable emission in the high dI/dt discharge current, have been observed or confirmed experimentally. Our results support the fact that the high dI/dt and short discharge currents have better EUV emission characteristics for EUV lithography compared with the low dI/dt discharge current.

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Section: Influence Of Di/dt and Pressure On The Collection Efficiencymentioning

confidence: 99%

A comparative study on the performance of a xenon capillaryZ-pinch EUV lithography light source using a pinhole camera

Song

Iwata

Homma

et al. 2006

Plasma Sources Sci. Technol.

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“…The etendue has a maximum limit of 1-3.3 mm 2 sr 1 in order to efficiently transfer the light source power to the wafer. To estimate the etendue, EUV images were investigated in many studies 7,16 . We measured the EUV emission at 10 kHz operation for a 30 micrometer xenon jet.…”

Section: Euv Imagementioning

confidence: 99%

High-power laser plasma EUV light source for lithography

Endo¹

2004

High-Power Laser Ablation V

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The main technological challenge of a future extreme ultraviolet (EUV) light source is the required average power of 115W at the intermediate focus. High repetition rate laser produced plasma (LPP) sources are very promising to face this challenge. We report the current status of the laser produced light source system we started to develop in 2002. The system consists of the following main components: The plasma target is a liquid xenon jet with a maximum diameter of 50 micrometer and a velocity of more than 30 m/s. A Nd:YAG laser oscillating at 1064 nm produces the plasma. The laser is a master oscillator power amplifier (MOPA) configuration with a maximum repetition rate of 10 kHz and an average power of 1kW. The EUV system currently delivers an average EUV in-band power of 4 W (2% bandwidth, 2π sr) having a stability of 0.54 % (1σ, 50-pulse moving average). Related to future collector mirror lifetime considerations, a magnetic confinement scheme is evaluated for fast ions mitigation

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High-Average Power EUV Light Source for the Next-Generation Lithography by Laser-Produced Plasma

Endo¹

2004

IEEE J. Select. Topics Quantum Electron.

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Spatial emission characteristics of EUV plasma sources

Cited by 4 publications

References 0 publications

A comparative study on the performance of a xenon capillaryZ-pinch EUV lithography light source using a pinhole camera

A comparative study on the performance of a xenon capillaryZ-pinch EUV lithography light source using a pinhole camera

High-power laser plasma EUV light source for lithography

High-Average Power EUV Light Source for the Next-Generation Lithography by Laser-Produced Plasma

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