Spatial mapping of electrically active defects in HgCdTe using laser beam-induced current

Bajaj, J.; Bubulac, L. O.; Newman, P. R.; Tennant, W. E.; Raccah, P. M.

doi:10.1116/1.574834

Cited by 59 publications

(20 citation statements)

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“…LBIC has proven useful in providing spatially resolved information about electrically active defects and localized nonuniformities in HgCdTe materials and devices used for infrared photovoltaic arrays. [7][8][9] In LBIC, regions of the semiconductor material which contain built-in fields will separate electron-hole pairs generated by an incident low power focused laser beam providing a measurable current. By scanning the laser across the sample, a map of the induced current is obtained which is indicative of the localized electric field distributions in the semiconductor.…”

Section: Introductionmentioning

confidence: 99%

Junction depth measurement in HgCdTe using laser beam induced current (LBIC)

Musca

Redfern

Smith

et al. 1999

Journal of Elec Materi

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A new, nondestructive junction depth measurement technique for HgCdTe photovoltaic devices is investigated. The technique uses a scanning laser microscope to obtain laser beam induced current (LBIC) data from which information regarding the junction depth is extracted, and is applicable to both homojunction and heterojunction diodes. For implanted heterojunction photodiodes, the position of the n-p junction relative to the heterojunction is an important factor determining completed device performance, with blind photodiodes resulting if the n-p junction is incorrectly placed. At present, the only methods available for junction depth determination (e.g., secondary ion mass spectroscopy and differential Hall) are destructive and not applicable as routine process monitoring techniques. It is envisaged that the development of a nondestructive routine process monitoring procedure will help improve yield and reduce the cost of HgCdTe photovoltaic devices. In this paper, experimental and theoretical results are presented in order to assess the sensitivity of the new technique to the effects of junction doping density, illumination wavelength, frontside/backside illumination, and test structure geometry.

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Section: Introductionmentioning

confidence: 99%

Junction depth measurement in HgCdTe using laser beam induced current (LBIC)

Musca

Redfern

Smith

et al. 1999

Journal of Elec Materi

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“…The n-on-p photodiodes were fabricated by the ion-milling technique. [4][5][6][7][8][9][10] The thickness of the epilayer was approximately 25 µm and the surface was passivated with a thin ZnS layer (0.25 µm thick) after surface processing with mechanical polishing and chemical etching with Br 2 /methanol. For the diodes fabrication, the type-conversion regions were designed by photolithography, followed by Ar + ion-bombardment to form the n-on-p junctions.…”

Section: Methodsmentioning

confidence: 99%

The blue-shift effect of the ion-milling-formed HgCdTe photodiodes

Zha

Shao²

2008

SPIE Proceedings

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“…The short broken, solid, and long broken lines are the vertical profiles of the relative OBIC intensity before aging, the relative OBIC intensity after aging, and the relative OBIC intensity difference before and after aging, respectively (Modified from Takeshita et al [39]) n-type InP buried layer and the n-type InP substrate are isolated by the p-type InP buried layer, and the electrons generated in depletion layers (3) and (4) do not reach the n-type InP substrate. On the other hand, an additional OBIC generated around depletion layers (3) and (4) is obtained after aging. This means that an electrical connection is realized between the n-type InP buried layer and the n-type InP substrate after aging.…”

Section: Inp Layer Degradationmentioning

confidence: 99%

Failure Analysis Using Optical Evaluation Technique (OBIC) of LDs and APDs for Fiber Optical Communication

Takeshita

2012

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

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By employing the optical-beam-induced current (OBIC) measurement technique, we have analyzed the sudden and wear-out failure of optical devices. The extent of the degraded region is estimated by using relative OBIC intensity prior to aging. The use of OBIC incident sources at several wavelengths enables us to detect degradation in facets, epitaxial layers, and the device interior. IntroductionOptical-beam-induced current (OBIC) measurement [1][2][3][4], as well as other approaches such as electron-beam-induced current (EBIC) measurement [5] and luminescence measurement [6], can determine the existence of deterioration in optical and electronic devices. Of these approaches, the OBIC technique has the advantages of being nondestructive and capable of selecting wavelengths [7].First, since the OBIC is measured through the window of a transistor outline (TO) can before and after aging, we are able to detect an OBIC change for several periods of aging. When there are nonradiative recombination centers in the degraded region, the OBIC intensity decreases as the recombination density increases [8]. The relative OBIC intensity prior to aging is useful for analyzing the degree of device degradation. Furthermore, the incident light that illuminates the facet is absorbed in the semiconductor. However, the lights incident on the top surface rather than the facet are absorbed in the layer to a depth of not more than a few micrometer. The OBIC measurement technique that involves illuminating the facet is therefore expected to be highly susceptible to degradation.

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Spatial mapping of electrically active defects in HgCdTe using laser beam-induced current

Cited by 59 publications

References 0 publications

Junction depth measurement in HgCdTe using laser beam induced current (LBIC)

Junction depth measurement in HgCdTe using laser beam induced current (LBIC)

The blue-shift effect of the ion-milling-formed HgCdTe photodiodes

Failure Analysis Using Optical Evaluation Technique (OBIC) of LDs and APDs for Fiber Optical Communication

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