1986
DOI: 10.1116/1.583331
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Spatial quantization in GaAs–AlGaAs multiple quantum dots

Abstract: We present results of the fabrication and investigation of totally spatially localized crystalline structures. Low temperature photoluminescence exhibits structure that is best explained by a bottleneck for hole energy loss. This bottleneck is believed to be a direct consequence of the modification of the band structure by the fabrication-imposed potential and is believed to be the first evidence for total spatial quantization in a fabricated heterojunction system.

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Cited by 229 publications
(60 citation statements)
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“…While the concept of quantum dots was advanced by Arakawa in 1982, as discussed in the historical section, the earliest quantum dots were fabricated successfully in 1986 by an indirect method, the post-growth lateral patterning of the 2D quantum wells (Reed et al, 1986). Synthesis of semiconductor nanocrystallites based on pyrolysis of organometallic reagents by injection into a hot coordinating solvent (Murray et al, 1993) followed about a half-decade later.…”
Section: Quantum Dotsmentioning
confidence: 99%
“…While the concept of quantum dots was advanced by Arakawa in 1982, as discussed in the historical section, the earliest quantum dots were fabricated successfully in 1986 by an indirect method, the post-growth lateral patterning of the 2D quantum wells (Reed et al, 1986). Synthesis of semiconductor nanocrystallites based on pyrolysis of organometallic reagents by injection into a hot coordinating solvent (Murray et al, 1993) followed about a half-decade later.…”
Section: Quantum Dotsmentioning
confidence: 99%
“…Since quantum dots were first discovered [1] and later fabricated, they have attracted a great deal of attention given how, just as single atoms or simple molecules, they depict quantum behavior at the level of their electronic and optical properties, but at the same time allow their tuning as a function of their shape, size, and composition--reason that has led some to refer to them as artificial atoms [2].…”
Section: Introductionmentioning
confidence: 99%
“…With recent developments of the molecular beam epitaxial (MBE) technique, it has become possible to fabricate and investigate GaAs±Ga 1Àx Al x As quantum-well wires [1,2]. In these quasi-one-dimensional semiconductor structures the electron motion is free along the length of the wire and it is quantized in the two dimensions perpendicular to the wire.…”
Section: Introductionmentioning
confidence: 99%